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NN325TRHARQ1

Texas Instruments

NN325TRHARQ1 by Texas Instruments

NN325TRHARQ1 by Texas Instruments is a 40-terminal microprocessor circuit with CMOS technology. It operates b/w -40 to 105 °C, supporting ADC channels and a clock frequency of up to 16 MHz. Ideal for industrial applications requiring I2C, SPI, or UART bus compatibility in a compact chip carrier package.

Median Price

$5.099

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 100,000 parts In-Stock

1+ parts

$5.099

100+ parts

$4.157

1k+ parts

$2.771

10k+ parts

-

100,000

$5.099

$4.157

$2.771

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 564 parts In-Stock

1+ parts

$4.844

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564

$4.844

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Vyrian

USA . 5,246 parts In-Stock

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5,246

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Distributors (Availability)

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Corphita

USA . 1,337 parts In-Stock

1+ parts

$4.589

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-

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1,337

$4.589

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AZTECH Wire

Italy . 550 parts In-Stock

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$19.040

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550

$19.040

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Parana Technologies

USA . 466 parts In-Stock

1+ parts

$20.254

100+ parts

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$20.244

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466

$20.254

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$20.244

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ChromeModa Solutions

Germany . 3,998 parts In-Stock

1+ parts

$22.757

100+ parts

$18.661

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3,998

$22.757

$18.661

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IDEA Electronic Components Group

UK . 1,813 parts In-Stock

1+ parts

$22.757

100+ parts

$21.619

1k+ parts

$20.481

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1,813

$22.757

$21.619

$20.481

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Corohmni

South Africa . 389 parts In-Stock

1+ parts

$40.850

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389

$40.850

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Lixinc

USA . 8,227 parts In-Stock

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Kepictronics

USA . 1,584 parts In-Stock

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1,584

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DigiPath Technology Company

USA . 1,310 parts In-Stock

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$20.518

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1,310

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$20.518

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Overview

Unlock endless possibilities with the NN325TRHARQ1 by Texas Instruments. Crafted with precision and expertise, this state-of-the-art microprocessor circuit is designed for industrial applications, offering unrivaled performance and reliability. From its innovative technology to its wide range of features like ADC channels and I2C/SPI/UART bus compatibility, this chip carrier promises seamless integration and maximum efficiency. Elevate your projects with Texas Instruments' trusted quality and experience the difference in every application. Step into the future of technology with the NN325TRHARQ1 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body material provides good durability and resistance to environmental factors, making the product reliable for various applications.

Maximum Supply Voltage: 3.6 V

The high maximum supply voltage allows for a wide range of power supply options, making the product versatile for different power requirements.

Maximum Operating Temperature: 105 °C

With a high maximum operating temperature, the product can withstand harsh operating conditions without compromising performance.

ADC Channels: YES

The presence of ADC channels allows for analog to digital conversion, enabling the product to interface with analog sensors or signals.

RAM Bytes: 1024

With a decent amount of RAM storage, the product can efficiently handle data processing and storage requirements for various applications.

Bus Compatibility: I2C; SPI; UART

The compatibility with multiple bus interfaces like I2C, SPI, and UART enhances the product's connectivity options, allowing for easy integration with other devices.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs NN325TRHARQ1 attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Texas Instruments

Specs

ADC Channels:

YES

Bus Compatibility:

I2C; SPI; UART

Maximum Clock Frequency:

16 MHz

External Data Bus Width:

0

JESD-30 Code:

S-PQCC-N40

JESD-609 Code:

e4

Length:

6 mm

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

40

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

RAM Bytes:

1024

Screening Level:

AEC-Q100

Maximum Seated Height:

1 mm

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

1.8 V

Nominal Supply Voltage:

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

6 mm

Peripheral IC Type:

Trade Compliance

NN325TRHARQ1 Peripheral ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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