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LMV227SDX

Texas Instruments

LMV227SDX by Texas Instruments

LMV227SDX by Texas Instruments is a Cellphone IC with 6 terminals, small outline package style, and operates b/w -40 to 85°C. It is used in RF and baseband circuits for cellphones due to its low profile design and industrial temperature grade suitability.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,677 parts In-Stock

1+ parts

-

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3,677

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Digiode

USA . 3,345 parts In-Stock

1+ parts

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3,345

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Anansix

USA . 628 parts In-Stock

1+ parts

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628

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,395 parts In-Stock

1+ parts

$11.636

100+ parts

-

1k+ parts

$12.030

10k+ parts

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1,395

$11.636

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$12.030

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DigiPath Technology Company

USA . 704 parts In-Stock

1+ parts

$12.813

100+ parts

$11.788

1k+ parts

-

10k+ parts

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704

$12.813

$11.788

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ChromeModa Solutions

Germany . 4,219 parts In-Stock

1+ parts

$13.074

100+ parts

$10.721

1k+ parts

-

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4,219

$13.074

$10.721

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IDEA Electronic Components Group

UK . 1,789 parts In-Stock

1+ parts

$13.074

100+ parts

$12.420

1k+ parts

$11.767

10k+ parts

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1,789

$13.074

$12.420

$11.767

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AZTECH Wire

Italy . 760 parts In-Stock

1+ parts

$18.976

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760

$18.976

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One Stop Electronics

USA . 158 parts In-Stock

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$585.000

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158

$585.000

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Corphita

USA . 4,696 parts In-Stock

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4,696

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Overview

Enhance the performance of your cellphone with the LMV227SDX by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-notch quality and reliability. This Cellphone IC boasts a compact surface mount design and a wide temperature range, making it ideal for various applications. With its innovative technology, the LMV227SDX ensures optimal functionality and efficiency, providing customers with unparalleled value and benefits. Upgrade your device today with this cutting-edge Telecom IC and experience enhanced performance like never before.

Feature Benefit Bullets

Surface Mount: YES

Allows for easy and efficient assembly onto circuit boards, saving time and effort during production.

Package Shape: RECTANGULAR

Provides a compact and organized layout, optimizing space on the circuit board.

No. of Terminals: 6

Offers enough connectivity options for the required functionality of the cellphone IC.

Maximum Operating Temperature: 85 °C

Ensures reliable performance even under high temperature conditions, making it suitable for various environments.

Minimum Operating Temperature: -40 °C

Can operate in extremely cold conditions without any performance issues, enhancing the product's versatility.

Maximum Seated Height: 0.8 mm

Low profile design allows for slim and sleek cellphone designs, appealing to consumers.

Width: 2.2 mm

Compact width enables efficient placement on the circuit board, contributing to a well-organized layout.

Length: 2.5 mm

Optimal length for the package size, ensuring a good balance between functionality and space efficiency.

Temperature Grade: INDUSTRIAL

Suitable for industrial applications where reliability and durability are crucial, making it a reliable choice for cellphone ICs.

Nominal Supply Voltage: 2.7 V

Matches the standard supply voltage requirement for cellphone ICs, ensuring compatibility with existing systems.

Terminal Pitch: 0.65 mm

Fine pitch allows for high-density packaging, saving space on the circuit board and enabling advanced features in the cellphone IC.

Technical Specifications

Cellphone ICs LMV227SDX attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

R-XDSO-N6

JESD-609 Code:

e3

Length:

2.5 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Qualification:

Not Qualified

Maximum Seated Height:

.8 mm

Nominal Supply Voltage:

2.7 V

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

2.2 mm

Trade Compliance

LMV227SDX Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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