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HPA00399RHDR

Texas Instruments

HPA00399RHDR by Texas Instruments

Texas Instruments HPA00399RHDR is a CMOS Telecom IC with 28 terminals in a square chip carrier package. Operating temperature range from -40 to 125 °C, suitable for automotive applications. Offers data rate of 0.25 Mbps and operates at nominal voltage of 3V, making it ideal for telecom circuit interfaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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ComSIT Distribution GmbH

Germany . 8,725 parts In-Stock

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Vyrian

USA . 5,040 parts In-Stock

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Digiode

USA . 1,710 parts In-Stock

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Nova Conductors

Japan . 750 parts In-Stock

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750

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Parana Technologies

USA . 1,049 parts In-Stock

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$5.927

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$6.711

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1,049

$5.927

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$6.711

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DigiPath Technology Company

USA . 861 parts In-Stock

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$6.526

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$6.004

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861

$6.526

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ChromeModa Solutions

Germany . 4,372 parts In-Stock

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$6.659

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$5.460

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$6.659

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IDEA Electronic Components Group

UK . 1,660 parts In-Stock

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$6.659

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$5.993

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$6.659

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$5.993

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AZTECH Wire

Italy . 892 parts In-Stock

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$13.093

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One Stop Electronics

USA . 638 parts In-Stock

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$191.000

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$191.000

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Ampacity Inc.

Singapore . 570 parts In-Stock

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$272.000

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Perfect Parts

USA . 93,243 parts In-Stock

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Continental Prestige Electronics

USA . 6,904 parts In-Stock

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Argo Parts USA

USA . 3,754 parts In-Stock

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Corphita

USA . 2,440 parts In-Stock

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Bastille Electronics

Australia . 1,000 parts In-Stock

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Overview

Experience the superior quality and reliability of Texas Instruments with the HPA00399RHDR. As a leader in telecom interface ICs, Texas Instruments delivers cutting-edge technology in a compact chip carrier package. With a wide operating temperature range and automotive-grade durability, this product is perfect for demanding applications. Trust in Texas Instruments to provide innovative solutions that exceed your expectations and deliver exceptional value to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures a lightweight and durable design, making it suitable for various applications.

Surface Mount: YES

Being surface mountable makes the product easy to install and allows for efficient PCB layout, saving space and simplifying assembly.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125 °C, this product can withstand extreme conditions, making it reliable for industrial or automotive use.

Nominal Supply Voltage: 3 V

Operating at a nominal supply voltage of 3V, this product offers energy efficiency and compatibility with various power sources.

Data Rate: 0.25 Mbps

With a data rate of 0.25 Mbps, this product is suitable for telecom applications requiring moderate speed and throughput.

Moisture Sensitivity Level (MSL): 3

Having a moisture sensitivity level of 3 indicates that this product is relatively resistant to moisture, ensuring reliability in humid environments.

Technical Specifications

Other Function Telecom Interface ICs HPA00399RHDR attributes and parameters. Explore more Other Function Telecom Interface ICs devices from Texas Instruments

Specs

Data Rate:

.25 Mbps

JESD-30 Code:

S-PQCC-N28

JESD-609 Code:

e4

Length:

5 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

28

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1 mm

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

5 mm

Trade Compliance

HPA00399RHDR Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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