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DRA767PSGACDRQ1

Texas Instruments

DRA767PSGACDRQ1 by Texas Instruments

DRA767PSGACDRQ1 by Texas Instruments is a multi-functional peripheral with 32-bit address bus width and 64-bit external data bus width. It operates at a max clock frequency of 38.4 MHz, making it suitable for automotive applications requiring high-speed processing. With a package style of grid array and low profile, this device offers 2.5M RAM words and compatibility with CAN, Ethernet, I2C, SPI, UART, and USB interfaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 6,016 parts In-Stock

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Vyrian

USA . 5,676 parts In-Stock

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Digiode

USA . 4,730 parts In-Stock

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AZTECH Wire

Italy . 244 parts In-Stock

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$6.329

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Corohmni

South Africa . 45 parts In-Stock

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$16.475

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$16.475

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Native Components

USA . 895 parts In-Stock

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$20.200

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$20.200

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Northwest PG Solutions

USA . 1,362 parts In-Stock

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$22.220

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$19.998

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One Stop Electronics

USA . 341 parts In-Stock

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$30.000

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Parana Technologies

USA . 1,300 parts In-Stock

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$53.601

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DigiPath Technology Company

USA . 50 parts In-Stock

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$59.021

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$59.021

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ChromeModa Solutions

Germany . 3,880 parts In-Stock

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$60.226

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$49.385

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$60.226

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IDEA Electronic Components Group

UK . 186 parts In-Stock

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$60.226

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$57.215

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$54.203

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186

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Microchip USA

USA . 4,363 parts In-Stock

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Corphita

USA . 2,801 parts In-Stock

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Overview

Experience the ultimate in performance and reliability with the DRA767PSGACDRQ1 by Texas Instruments. As a leader in the industry, Texas Instruments ensures only the highest quality products. The DRA767PSGACDRQ1 falls under the category of Multi-functional Peripherals, making it versatile for various applications. From automotive to industrial settings, this product offers unmatched value and benefits, providing customers with the cutting-edge technology they need to stay ahead in today's competitive market. Choose Texas Instruments for superior quality and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy materials are lightweight and durable, making the product easy to handle and resistant to damage.

Maximum Supply Voltage: 1.2 V

Operates efficiently on a relatively low supply voltage, reducing power consumption and heat generation.

Maximum Operating Temperature: 125 °C

Capable of operating under high temperature conditions, suitable for various applications and environments.

External Data Bus Width: 64

Wide external data bus allows for fast data transfer and processing, enhancing overall performance.

Bus Compatibility: CAN; ETHERNET; I2C; SPI; UART; USB

Compatible with various bus protocols, enabling seamless integration with different systems and devices.

Technical Specifications

Multi-functional Peripherals DRA767PSGACDRQ1 attributes and parameters. Explore more Multi-functional Peripherals devices from Texas Instruments

Specs

Address Bus Width:

32

Boundary Scan:

YES

Bus Compatibility:

CAN; ETHERNET; I2C; SPI; UART; USB

Maximum Clock Frequency:

38.4 MHz

External Data Bus Width:

64

JESD-30 Code:

S-PBGA-B784

JESD-609 Code:

e1

Length:

23 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

247

No. of Terminals:

784

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

250

RAM Words:

2.5M

Screening Level:

AEC-Q100

Maximum Seated Height:

1.63 mm

Speed:

1800 rpm

Maximum Supply Voltage:

1.2 V

Minimum Supply Voltage:

1.11 V

Nominal Supply Voltage:

1.15 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

23 mm

Trade Compliance

DRA767PSGACDRQ1 Peripheral ICs trade compliance attributes, and parameters.

ECCN

5A992.C

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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