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CLVTH162240IDGGREP

Texas Instruments

CLVTH162240IDGGREP by Texas Instruments

CLVTH162240IDGGREP by Texas Instruments is a 4-bit bus driver with 3.3V nominal voltage, featuring 4.6ns propagation delay and -40 to 85°C operating temperature range. Ideal for industrial applications requiring high-speed signal transmission in compact spaces.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,668 parts In-Stock

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3,668

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Digiode

USA . 3,383 parts In-Stock

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3,383

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Distributors (Availability)

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AZTECH Wire

Italy . 309 parts In-Stock

1+ parts

$8.050

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309

$8.050

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Native Components

USA . 242 parts In-Stock

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$12.927

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242

$12.927

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Northwest PG Solutions

USA . 2,002 parts In-Stock

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$14.219

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$12.797

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2,002

$14.219

$12.797

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Parana Technologies

USA . 673 parts In-Stock

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$28.229

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$45.168

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673

$28.229

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$45.168

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DigiPath Technology Company

USA . 1,052 parts In-Stock

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$31.084

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$28.597

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1,052

$31.084

$28.597

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IDEA Electronic Components Group

UK . 2,366 parts In-Stock

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$31.718

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$30.132

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$28.546

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2,366

$31.718

$30.132

$28.546

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ChromeModa Solutions

Germany . 1,470 parts In-Stock

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$31.718

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$26.009

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$31.718

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One Stop Electronics

USA . 936 parts In-Stock

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$63.000

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936

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Corphita

USA . 1,953 parts In-Stock

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Microchip USA

USA . 194 parts In-Stock

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Overview

Upgrade your bus driver and transceiver system with the CLVTH162240IDGGREP by Texas Instruments. Crafted with precision using high-quality materials, this product offers unparalleled performance and reliability. With its compact design and advanced technology, it is the perfect solution for a wide range of applications. Experience seamless data transmission and enhanced efficiency with this versatile component. Trust Texas Instruments to deliver cutting-edge solutions that meet your needs. Elevate your projects with the CLVTH162240IDGGREP today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product durable and lightweight, making it easy to handle and transport.

Surface Mount: YES

The surface mount capability allows for easy and efficient installation on circuit boards, saving time and effort during assembly.

No. of Functions: 4

Having multiple functions in one device increases functionality and versatility, reducing the need for additional components.

Nominal Supply Voltage (Vsup): 3.3V

The nominal supply voltage of 3.3V is a common standard, making it compatible with a wide range of systems and applications.

Propagation Delay (tpd): 4.6 ns

A low propagation delay of 4.6 ns ensures fast and efficient data transmission, improving overall performance.

Maximum Operating Temperature: 85°C

With a high maximum operating temperature of 85°C, the product can withstand challenging environmental conditions without compromising functionality.

Technology: BICMOS

The use of BiCMOS technology combines the benefits of both bipolar and CMOS technologies, providing high-speed performance and low power consumption.

Technical Specifications

Bus Driver & Transceivers CLVTH162240IDGGREP attributes and parameters. Explore more Bus Driver & Transceivers devices from Texas Instruments

Specs

Family:

LVT

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e4

Length:

12.5 mm

Logic IC Type:

Moisture Sensitivity Level (MSL):

1

No. of Bits:

4

No. of Functions:

4

No. of Ports:

2

No. of Terminals:

48

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE WITH SERIES RESISTOR

Output Polarity:

INVERTED

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Propagation Delay (tpd):

4.6 ns

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

6.1 mm

Trade Compliance

CLVTH162240IDGGREP Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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