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CD54HC4511F

Texas Instruments

CD54HC4511F by Texas Instruments

CD54HC4511F by Texas Instruments is a CMOS Decoder & Driver with 16 terminals. It operates at supply voltages ranging from 2V to 6V and has a propagation delay of 405ns. Ideal for military applications due to its MILITARY temperature grade and latched input conditioning feature.

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4

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1k+

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Vyrian

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Digiode

USA . 2,036 parts In-Stock

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Pegasus Components GmbH

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Native Components

USA . 318 parts In-Stock

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$1.670

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Northwest PG Solutions

USA . 474 parts In-Stock

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AZTECH Wire

Italy . 247 parts In-Stock

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Parana Technologies

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ChromeModa Solutions

Germany . 5,923 parts In-Stock

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IDEA Electronic Components Group

UK . 162 parts In-Stock

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One Stop Electronics

USA . 585 parts In-Stock

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Corphita

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DigiPath Technology Company

USA . 2,255 parts In-Stock

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Supply Digital

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Overview

Experience unparalleled performance and reliability with the CD54HC4511F by Texas Instruments. As a leader in the industry, Texas Instruments delivers top-notch quality and innovation in their products. The CD54HC4511F falls under the category of Decoder & Drivers, making it essential for various applications. With a wide temperature range and high-speed operation, this product is a game-changer in the field. Trust Texas Instruments to provide you with cutting-edge solutions that offer value, benefits, and advantages to meet your needs. Elevate your projects with the CD54HC4511F and experience the difference today.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed package body material provides durability and reliability, ensuring the product can withstand harsh environments.

Input Conditioning: LATCHED

The latched input conditioning feature helps in maintaining the state of input signals, which is essential for accurate decoding and driving operations.

Nominal Supply Voltage / Vsup (V): 4.5

The nominal supply voltage of 4.5V is a common and stable voltage level that ensures consistent performance of the decoder and driver.

Propagation Delay (tpd): 405 ns

The low propagation delay of 405 ns indicates fast response time, making this product suitable for high-speed applications where quick signal processing is required.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125°C allows the decoder and driver to function reliably even in elevated temperature conditions.

Temperature Grade: MILITARY

The military-grade temperature rating ensures that the product meets stringent quality and reliability standards, making it suitable for mission-critical applications where performance under extreme conditions is necessary.

Technology: CMOS

The CMOS technology used in the product offers low power consumption, high noise immunity, and faster operation, making it energy-efficient and reliable for various applications.

Technical Specifications

Decoder & Drivers CD54HC4511F attributes and parameters. Explore more Decoder & Drivers devices from Texas Instruments

Specs

Family:

HC/UH

Input Conditioning:

LATCHED

JESD-30 Code:

R-GDIP-T16

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Polarity:

TRUE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

2/6

Propagation Delay (tpd):

405 ns

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

Decoder/Drivers

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

4.5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.62 mm

Trade Compliance

CD54HC4511F Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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