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BUF07704AIPWPG4

Texas Instruments

BUF07704AIPWPG4 by Texas Instruments

BUF07704AIPWPG4 by Texas Instruments is a 6-function buffer amplifier with a bandwidth of 1 MHz. It operates b/w -25 to 85 °C and has a supply voltage of 18 V. Ideal for applications requiring low bias current and high input offset voltage precision in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,844 parts In-Stock

1+ parts

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5,844

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Digiode

USA . 3,442 parts In-Stock

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3,442

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 466 parts In-Stock

1+ parts

$2.110

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466

$2.110

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Northwest PG Solutions

USA . 1,225 parts In-Stock

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$2.321

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$2.321

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One Stop Electronics

USA . 1,078 parts In-Stock

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$3.410

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1,078

$3.410

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Parana Technologies

USA . 2,193 parts In-Stock

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$6.215

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$6.976

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2,193

$6.215

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$6.976

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ChromeModa Solutions

Germany . 3,364 parts In-Stock

1+ parts

$6.983

100+ parts

$5.726

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3,364

$6.983

$5.726

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IDEA Electronic Components Group

UK . 538 parts In-Stock

1+ parts

$6.983

100+ parts

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$6.285

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538

$6.983

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$6.285

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AZTECH Wire

Italy . 680 parts In-Stock

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$10.359

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680

$10.359

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Corphita

USA . 1,558 parts In-Stock

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1,558

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DigiPath Technology Company

USA . 650 parts In-Stock

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$6.296

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650

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$6.296

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Overview

Elevate your electronic designs with the BUF07704AIPWPG4 from Texas Instruments, a top-tier manufacturer known for delivering high-quality products. As a buffer amplifier, this component offers unparalleled performance and reliability in various applications. With a nominal bandwidth of 1 MHz and a maximum supply voltage limit of 19V, this compact and versatile device is designed to meet your needs effortlessly. Experience the value of seamless operation and enhanced functionality with the BUF07704AIPWPG4, setting new standards in the industry.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the buffer amplifier.

Maximum Input Offset Voltage: 20000 uV

Allows for accurate signal processing with minimal deviation.

Maximum Average Bias Current (IIB): 0.0002 uA

Ensures low power consumption and efficient operation.

Surface Mount: YES

Facilitates easy and convenient installation on circuit boards.

Nominal Supply Voltage / Vsup (V): 18

Ideal operating voltage for stable performance.

Nominal Bandwidth (3dB): 1 MHz

Offers good frequency response for signal amplification.

Technology: BIPOLAR

Provides reliable amplification with low noise.

Technical Specifications

Buffer Amplifiers BUF07704AIPWPG4 attributes and parameters. Explore more Buffer Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

Bipolar

Total Functions:

6

Sub-Category:

Buffer Amplifiers

Performance Specifications

Nominal Bandwidth (3dB):

1 MHz

Nominal Slew Rate:

1.6 V/us

Input Offset Voltage Limit:

20 mV

Peak Bias Current:

200 pA

Operational Characteristics

Nominal Supply Voltage:

18 V

Maximum Supply Voltage:

19 V

Lowest Operating Temperature:

-25 °C (-13 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Reflow Peak Time Limit:

30 s

Peak Reflow Temperature:

260 °C (500 °F)

Physical Characteristics

Length:

0.256 in (6.5 mm)

Width:

0.173 in (4.4 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

20

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Style:

Terminal Finish:

Nickel PalladiumGold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

2

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G20

JESD-609 Code:

e4

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline, Heat Sink/Slug, Thin Profile, Shrink Pitch

Trade Compliance

BUF07704AIPWPG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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