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BQ500414QRGZT

Texas Instruments

BQ500414QRGZT by Texas Instruments

BQ500414QRGZT by Texas Instruments is a Power Management IC with 48 terminals, operating at -40 to 110°C. It supports a nominal voltage of 3.3V and has a package style of CHIP CARRIER. Ideal for industrial applications requiring power supply support circuits in compact spaces.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,563 parts In-Stock

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7,563

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Digiode

USA . 4,572 parts In-Stock

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4,572

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 449 parts In-Stock

1+ parts

$0.770

100+ parts

-

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449

$0.770

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Northwest PG Solutions

USA . 746 parts In-Stock

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$0.847

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-

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746

$0.847

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Parana Technologies

USA . 121 parts In-Stock

1+ parts

$4.842

100+ parts

$449.616

1k+ parts

$4.357

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121

$4.842

$449.616

$4.357

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DigiPath Technology Company

USA . 1,412 parts In-Stock

1+ parts

$5.331

100+ parts

$4.905

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1,412

$5.331

$4.905

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ChromeModa Solutions

Germany . 2,572 parts In-Stock

1+ parts

$5.440

100+ parts

$4.461

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2,572

$5.440

$4.461

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IDEA Electronic Components Group

UK . 2,215 parts In-Stock

1+ parts

$5.440

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$4.896

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2,215

$5.440

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$4.896

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Semicontronic

India . 1,360 parts In-Stock

1+ parts

$5.500

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$5.362

1k+ parts

$5.335

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1,360

$5.500

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$5.335

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One Stop Electronics

USA . 1,400 parts In-Stock

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$6.500

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1,400

$6.500

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Ampacity Inc.

Singapore . 605 parts In-Stock

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$6.500

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605

$6.500

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AZTECH Wire

Italy . 253 parts In-Stock

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$12.742

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253

$12.742

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Corphita

USA . 1,915 parts In-Stock

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Corohmni

South Africa . 342 parts In-Stock

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342

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Overview

Elevate your power management capabilities with the BQ500414QRGZT by Texas Instruments. Crafted with precision and expertise, this Power Management IC offers unparalleled performance and reliability. Ideal for a wide range of applications, this product boasts a package body material of PLASTIC/EPOXY, ensuring durability and efficiency. With a nominal supply voltage of 3.3V and a temperature grade of INDUSTRIAL, this IC is designed to exceed expectations in even the most demanding environments. Experience seamless integration and superior functionality with the BQ500414QRGZT - the ultimate solution for your power management needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the Power Management IC, making it suitable for various applications.

Surface Mount: YES

The surface mount feature allows for easy and efficient PCB assembly, saving time and effort during the manufacturing process.

Nominal Supply Voltage (Vsup): 3.3 V

The 3.3V supply voltage is a common and stable power source, ensuring reliable performance of the Power Management IC.

Maximum Operating Temperature: 110 °C

With a maximum operating temperature of 110°C, this Power Management IC can withstand high temperature environments, making it suitable for industrial applications.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel palladium gold terminal finish provides excellent conductivity and corrosion resistance, ensuring reliable electrical connections for the Power Management IC.

Temperature Grade: INDUSTRIAL

The industrial temperature grade indicates that this Power Management IC is designed to operate in harsh environmental conditions commonly found in industrial settings.

Technical Specifications

Power Management ICs BQ500414QRGZT attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Adjustable Threshold:

NO

JESD-30 Code:

S-PQCC-N48

JESD-609 Code:

e4

Length:

7 mm

Moisture Sensitivity Level (MSL):

3

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

48

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage (Vsup):

3.3 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

7 mm

Trade Compliance

BQ500414QRGZT Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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