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74AHCT1G02DBVRG4

Texas Instruments

74AHCT1G02DBVRG4 by Texas Instruments

74AHCT1G02DBVRG4 by Texas Instruments is a logic gate with 2 inputs, 8.5 ns propagation delay at 5V supply, and 50 pF load capacitance. It is used in industrial applications due to its CMOS technology, -40 to 85 °C operating temperature range, and small outline package style.

Median Price

$0.156

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 6,000 parts In-Stock

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$0.156

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Vyrian

USA . 6,310 parts In-Stock

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Digiode

USA . 1,634 parts In-Stock

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AZTECH Wire

Italy . 535 parts In-Stock

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$11.010

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Parana Technologies

USA . 1,209 parts In-Stock

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$15.568

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$15.942

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DigiPath Technology Company

USA . 1,600 parts In-Stock

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$17.142

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ChromeModa Solutions

Germany . 5,478 parts In-Stock

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$17.492

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IDEA Electronic Components Group

UK . 1,648 parts In-Stock

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$16.617

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$15.743

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Native Components

USA . 574 parts In-Stock

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$44.290

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Northwest PG Solutions

USA . 1,872 parts In-Stock

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Corphita

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Microchip USA

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Overview

Discover the superior quality and reliability of Texas Instruments with the 74AHCT1G02DBVRG4 Logic Gates. Perfect for a wide range of applications, this product offers fast propagation delay and a compact design for seamless integration. With a low profile package style and industrial temperature grade, customers can trust in the high performance and durability of this logic gate. Experience the benefits of Texas Instruments technology and unlock new possibilities for your projects.

Feature Benefit Bullets

Propagation Delay At Nominal Supply: 8.5 ns

Low propagation delay ensures fast signal processing, making this product suitable for applications requiring quick response times.

No. of Inputs: 2

Having 2 inputs allows for multiple input combinations, increasing the versatility of this logic gate.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage makes integration and compatibility with existing systems easier.

Power Supplies (V): 5

Consistent supply voltage of 5V ensures stable operation and reliable performance.

Output Characteristics: 3-STATE

3-state output allows for high impedance state, providing flexibility in connecting multiple outputs to a common bus line.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature range (-40°C to 85°C) ensures reliable operation in harsh environments, making this product suitable for industrial applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this logic gate energy-efficient and reliable in noisy environments.

Technical Specifications

Logic Gates 74AHCT1G02DBVRG4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

AHCT/VHCT/VT

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2.9 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

8.5 ns

Propagation Delay (tpd):

8.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.45 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.6 mm

Trade Compliance

74AHCT1G02DBVRG4 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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