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5962-01-267-5826

Texas Instruments

5962-01-267-5826 by Texas Instruments

Texas Instruments' 5962-01-267-5826 is a 512x8 OTP ROM with 4096-bit memory density. Operating at 5V, it has a max access time of 60ns and operates in commercial temperature grades. This rectangular package with 20 terminals is ideal for applications requiring non-volatile memory storage in TTL technology.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,987 parts In-Stock

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Digiode

USA . 2,809 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 2 parts In-Stock

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Native Components

USA . 830 parts In-Stock

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$1.245

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830

$1.245

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Northwest PG Solutions

USA . 1,227 parts In-Stock

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$1.369

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One Stop Electronics

USA . 1,062 parts In-Stock

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$4.000

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$4.000

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Parana Technologies

USA . 1,143 parts In-Stock

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$5.120

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$5.708

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1,143

$5.120

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DigiPath Technology Company

USA . 931 parts In-Stock

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$5.638

100+ parts

$5.187

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931

$5.638

$5.187

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ChromeModa Solutions

Germany . 2,938 parts In-Stock

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$5.753

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$4.717

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2,938

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IDEA Electronic Components Group

UK . 1,325 parts In-Stock

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$5.753

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$5.178

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AZTECH Wire

Italy . 666 parts In-Stock

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$12.808

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Corphita

USA . 4,982 parts In-Stock

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Overview

Unlock a world of possibilities with the 5962-01-267-5826 by Texas Instruments. As a leader in semiconductor technology, Texas Instruments ensures top-notch quality and reliability in all their products. This OTP ROM offers unmatched value with its versatile applications in various industries. From embedded systems to consumer electronics, this product provides the perfect solution for your memory needs. Trust Texas Instruments to deliver cutting-edge technology that meets your demands for performance, efficiency, and innovation. Elevate your projects with the 5962-01-267-5826 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good protection and durability for the ROM chip, ensuring reliable performance.

Nominal Supply Voltage / Vsup (V): 5

Having a nominal supply voltage of 5V makes this OTP ROM compatible with standard voltage levels, simplifying integration into existing systems.

No. of Terminals: 20

Having 20 terminals allows for easy connection and communication with other components in the system, enhancing overall functionality.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this OTP ROM is suitable for a wide range of environments and applications.

Organization: 512X8

The 512X8 organization of this OTP ROM provides a decent amount of memory storage while maintaining efficient data access and retrieval.

Technology: TTL

TTL technology ensures fast and reliable data transfer speeds, making this OTP ROM ideal for applications requiring quick access to stored information.

Memory Density: 4096 bit

With a memory density of 4096 bits, this OTP ROM offers ample storage capacity for various data and programming needs.

Maximum Access Time: 60 ns

The maximum access time of 60 nanoseconds ensures quick response times when accessing data stored in the OTP ROM, enhancing overall system performance.

Technical Specifications

OTP ROM 5962-01-267-5826 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

60 ns

JESD-30 Code:

R-PDIP-T20

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

5962-01-267-5826 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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