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2N3999

Texas Instruments

2N3999 by Texas Instruments

2N3999 by Texas Instruments is a NPN BJT transistor with 80V VCE, 5A IC, and 40MHz fT. Ideal for switching applications due to its 2W power dissipation and single configuration. The round package with solder lug terminals makes it suitable for post/stud mount installations.

Median Price

$17.890

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

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American Microsemiconductor Inc.

USA . 27 parts In-Stock

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Vyrian

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Digiode

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Electronic Expediters

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PUI

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ES Components

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Beltway Electronics Company

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ZD Integrated Circuits Inc.

USA . 7 parts In-Stock

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Sunrise Surplus Inc.

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R&J Components

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Parana Technologies

USA . 861 parts In-Stock

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$0.440

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$1.604

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DigiPath Technology Company

USA . 2,328 parts In-Stock

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$0.484

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$0.445

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ChromeModa Solutions

Germany . 4,679 parts In-Stock

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$0.494

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IDEA Electronic Components Group

UK . 1,814 parts In-Stock

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Native Components

USA . 353 parts In-Stock

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Northwest PG Solutions

USA . 366 parts In-Stock

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One Stop Electronics

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AZTECH Wire

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QUARKTWIN TECHNOLOGY LTD

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Microchip USA

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Corphita

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QualityLine Systems

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Marpe Global Electronics

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XL Components Corporation

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Supply Digital

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Perfect Parts

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RTC Component Inc.

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Overview

Upgrade your electronic projects with the Texas Instruments 2N3999 Power Bipolar Junction Transistor. Known for its high quality and reliability, Texas Instruments is a leading manufacturer in the industry. The 2N3999 is perfect for switching applications, offering a maximum collector current of 5A and a minimum DC current gain of 60. With a maximum power dissipation of 2W and a maximum operating temperature of 175°C, this NPN transistor ensures optimal performance and durability. Trust Texas Instruments to deliver superior products that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: METAL

The use of metal for the package body provides durability and helps in efficient heat dissipation, making this transistor suitable for applications that require high reliability and long-term performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering good performance and versatility in circuit design.

Configuration: SINGLE

Single configuration simplifies the circuit design and is suitable for basic switching applications where only one transistor is needed.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides fast response times and efficient operation in on/off control circuits.

Package Shape: ROUND

The round package shape allows for easy mounting and installation, making it suitable for various electronic devices and equipment.

Terminal Form: SOLDER LUG

Solder lug terminals make it easy to solder the transistor onto a PCB or other electronic components, ensuring secure connections and reliable performance.

No. of Terminals: 3

Having 3 terminals allows for easy integration into different circuit configurations, providing flexibility in circuit design and application.

Maximum Power Dissipation (Abs): 2 W

With a maximum power dissipation of 2W, this transistor can handle higher power levels, making it suitable for applications that require robust performance.

Package Style (Meter): POST/STUD MOUNT

The post/stud mount package style offers a secure mounting option, making it suitable for applications where mechanical stability is important.

Minimum DC Current Gain (hFE): 60

A minimum DC current gain of 60 ensures proper amplification of the input signal, making this transistor suitable for amplification circuits.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175°C, this transistor can withstand high-temperature environments, making it suitable for industrial applications.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage of 80V allows for operation in circuits with higher voltage levels, making this transistor versatile in various applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance, reliability, and efficiency, making this transistor a good choice for applications that require stable operation over time.

Maximum Collector Current (IC): 5 A

With a maximum collector current of 5A, this transistor can handle higher current levels, making it suitable for applications that require higher power outputs.

Terminal Position: UPPER

The upper terminal position simplifies the connection of the transistor in circuit layouts, making it easy to integrate into existing designs.

Case Connection: COLLECTOR

The case connection at the collector terminal provides a convenient connection point for external circuitry, simplifying the overall design and integration process.

Nominal Transition Frequency (fT): 40 MHz

With a nominal transition frequency of 40MHz, this transistor offers high-speed performance, making it suitable for high-frequency switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N3999 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-111

JESD-30 Code:

O-MUPM-D3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

SOLDER LUG

Terminal Position:

UPPER

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N3999 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-760-0746, 5961007600746, 5961-00-433-5729, 5961004335729

NIIN

007600746, 004335729

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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