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2N3902

Texas Instruments

2N3902 by Texas Instruments

2N3902 by Texas Instruments is a NPN BJT with max. collector-emitter voltage of 400V, max. power dissipation of 100W, and max. collector current of 2.5A. It is used in applications requiring high power handling such as power supplies and motor control due to its single configuration and silicon transistor element material.

Median Price

$2.890

Lifecycle Status

Suppliers In-Stock

29

In-Stock Inventory

1k+

Distributors (Authorized)

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Newark

USA . 910 parts In-Stock

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$1.110

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910

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Farnell

UK . 916 parts In-Stock

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$2.180

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$1.050

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$0.876

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916

$2.180

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Element14

Singapore . 916 parts In-Stock

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$3.600

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$1.730

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$1.450

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916

$3.600

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Microchip Technology

USA . 324 parts In-Stock

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$47.920

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Digiode

USA . 3,836 parts In-Stock

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American Microsemiconductor Inc.

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TEDSS.com

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Ace Electronics

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Vyrian

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PUI

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Electronic Expediters

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ACDS - Activité Composants Distribution Service

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Holdelec - ElecDif-Pro

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MISTER SPROCKETS

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Manoshevitz Elec. Sales

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Bristol Electronics

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Tech-Mark Corp

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EMSNET

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ECAB

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Prism Electronics

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Resion

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Elcom Components

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Corel Iberica Componentes, S.L.

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 5 parts In-Stock

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First Choice Components Inc.

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Mil-Aero Solutions, Inc.

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R&J Components

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Sinequanon

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Electronics Depot

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Distributors (Availability)

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Parana Technologies

USA . 1,641 parts In-Stock

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$1.104

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$1.940

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1,641

$1.104

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$1.940

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DigiPath Technology Company

USA . 1,016 parts In-Stock

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$1.216

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$1.119

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$1.216

$1.119

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ChromeModa Solutions

Germany . 4,007 parts In-Stock

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$1.241

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$1.018

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$1.241

$1.018

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IDEA Electronic Components Group

UK . 898 parts In-Stock

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$1.241

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$1.117

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Native Components

USA . 365 parts In-Stock

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$1.899

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Northwest PG Solutions

USA . 504 parts In-Stock

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$2.089

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$2.089

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One Stop Electronics

USA . 210 parts In-Stock

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$4.840

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Ampacity Inc.

Singapore . 65 parts In-Stock

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$4.840

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Corphita

USA . 3,811 parts In-Stock

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$5.130

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Component Stockers USA

USA . 386 parts In-Stock

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$5.550

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$4.360

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Continental Prestige Electronics

USA . 65 parts In-Stock

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$12.500

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$6.810

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$3.740

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$12.500

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QUARKTWIN TECHNOLOGY LTD

USA . 20,404 parts In-Stock

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Microchip USA

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Authorized Procurement Solutions

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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West Coast Incorporated

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Kepictronics

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Perfect Parts

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Assy Fe

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RTC Component Inc.

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A-Plus Industry Inc.

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Overview

Looking for a reliable power bipolar junction transistor? Look no further than the 2N3902 by Texas Instruments. Known for their superior quality and performance, Texas Instruments delivers a top-notch product that is perfect for a wide range of applications. From amplifiers to switching circuits, this NPN transistor offers high power dissipation, a maximum collector-emitter voltage of 400V, and a nominal transition frequency of 5 MHz. Trust in Texas Instruments to provide you with a durable and efficient solution for all your electronic needs.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides good thermal conductivity, allowing for efficient heat dissipation and helping to increase the overall reliability of the transistor.

Polarity or Channel Type: NPN

NPN transistors are widely used in various electronic circuits due to their high input impedance and fast switching speeds.

Maximum Power Dissipation (Abs): 100 W

With a high maximum power dissipation of 100 W, this transistor can handle heavy loads and high power applications without overheating.

Maximum Collector-Emitter Voltage: 400 V

The high maximum collector-emitter voltage of 400 V allows for the transistor to be used in a wide range of voltage applications, making it versatile.

Nominal Transition Frequency (fT): 5 MHz

A high nominal transition frequency of 5 MHz indicates fast switching speeds, making this transistor suitable for high frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N3902 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N3902 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-085-0468, 5961000850468, 5961-00-074-8841, 5961000748841, 5961-00-404-9013, 5961004049013, 5961-01-112-0759, 5961011120759, 5961-00-050-3461, 5961000503461, 5961-00-230-7998, 5961002307998, 5961-00-839-4685, 5961008394685, 5961-01-004-7776, 5961010047776, 5961-01-089-0777, 5961010890777, 5961-99-208-8300, 5961992088300, 5999-00-839-4658, 5999008394658

NIIN

000850468, 000748841, 004049013, 011120759, 000503461, 002307998, 008394685, 010047776, 010890777, 992088300, 008394658

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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