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2N3996

Texas Instruments

2N3996 by Texas Instruments

2N3996 by Texas Instruments is a NPN BJT transistor with max. power dissipation of 2W, max. collector-emitter voltage of 80V, and max. collector current of 5A. It is used for switching applications due to its single configuration and high transition frequency of 40MHz.

Median Price

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Lifecycle Status

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5

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1k+

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Vyrian

USA . 6,488 parts In-Stock

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Digiode

USA . 809 parts In-Stock

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Q Components

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Semi Source

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PUI

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Parana Technologies

USA . 2,222 parts In-Stock

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$0.348

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$1.565

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DigiPath Technology Company

USA . 1,260 parts In-Stock

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$0.383

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ChromeModa Solutions

Germany . 3,048 parts In-Stock

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$0.391

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$0.321

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IDEA Electronic Components Group

UK . 1,031 parts In-Stock

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$0.352

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Northwest PG Solutions

USA . 257 parts In-Stock

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$2.695

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One Stop Electronics

USA . 1,393 parts In-Stock

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$6.050

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AZTECH Wire

Italy . 594 parts In-Stock

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Microchip USA

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QUARKTWIN TECHNOLOGY LTD

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LMD Electronica

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Authorized Procurement Solutions

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Montano Global Distributors

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CPlus Electronics

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NIA Electronics

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Corphita

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RC Electronics

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Native Components

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Ledger Components

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LOOK Integrated Logistics

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RTC Component Inc.

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Overview

Looking for a reliable and high-quality Power Bipolar Junction Transistor? Look no further than the 2N3996 by Texas Instruments! Known for their superior manufacturing standards, Texas Instruments delivers top-notch products like the 2N3996 that excel in switching applications. With a maximum collector-emitter voltage of 80V and a maximum collector current of 5A, this NPN transistor offers exceptional performance and reliability. Whether you're designing industrial equipment or automotive electronics, the 2N3996 provides the value, benefits, and advantages you need to take your project to the next level. Trust Texas Instruments to deliver excellence in every component.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides durability and thermal conductivity, ensuring reliable performance for switching applications.

Polarity or Channel Type: NPN

NPN polarity allows for easy integration with other NPN components in a circuit, making it a versatile choice for various applications.

Configuration: SINGLE

Single configuration simplifies circuit design and implementation, making it easier to use in switching applications.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient and reliable performance in high-frequency switching circuits.

Package Shape: ROUND

Round package shape allows for easy mounting and installation in various electronic devices and equipment.

Terminal Form: SOLDER LUG

Solder lug terminals provide a secure and reliable connection, making installation and maintenance easier.

No. of Terminals: 4

Having 4 terminals allows for flexibility in circuit design and enables additional connections for specific applications.

Maximum Power Dissipation (Abs): 2 W

With a maximum power dissipation of 2W, this transistor can handle high power levels, making it suitable for demanding applications.

Package Style (Meter): POST/STUD MOUNT

Post/stud mount package style provides easy installation and secure mounting, ensuring stable performance in various environments.

Minimum DC Current Gain (hFE): 30

With a minimum DC current gain of 30, this transistor can amplify current efficiently, enabling better performance in switching applications.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175°C, this transistor can withstand high temperatures, making it suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 80 V

With a maximum collector-emitter voltage of 80V, this transistor can handle high voltage levels, making it suitable for various voltage requirements.

Transistor Element Material: SILICON

Silicon transistor element material ensures high performance and reliability, making it a preferred choice for switching applications.

Maximum Collector Current (IC): 5 A

With a maximum collector current of 5A, this transistor can handle high current levels, making it suitable for power switching applications.

Terminal Position: UPPER

Upper terminal position simplifies circuit connections and layout, making it easier to integrate into existing designs.

Case Connection: ISOLATED

Isolated case connection ensures electrical safety and prevents interference, making it suitable for high-voltage applications.

Nominal Transition Frequency (fT): 40 MHz

High nominal transition frequency of 40MHz indicates fast response and switching speeds, making it ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N3996 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-111

JESD-30 Code:

O-MUPM-D4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

SOLDER LUG

Terminal Position:

UPPER

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N3996 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-484-7734, 5961004847734, 5961-99-118-0004, 5961991180004, 5961-99-118-4742, 5961991184742

NIIN

004847734, 991180004, 991184742

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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