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2N3999

General Semiconductor

2N3999 by General Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 5 A;

Median Price

$17.890

Lifecycle Status

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10

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American Microsemiconductor Inc.

USA . 27 parts In-Stock

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Vyrian

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Digiode

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Electronic Expediters

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Beltway Electronics Company

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ZD Integrated Circuits Inc.

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Sunrise Surplus Inc.

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Parana Technologies

USA . 861 parts In-Stock

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$0.440

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$1.604

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DigiPath Technology Company

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ChromeModa Solutions

Germany . 4,679 parts In-Stock

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IDEA Electronic Components Group

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Native Components

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Northwest PG Solutions

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One Stop Electronics

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AZTECH Wire

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Microchip USA

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RTC Component Inc.

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Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N3999 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from General Semiconductor

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Base Capacitance:

150 pF

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-214AA

JESD-30 Code:

O-MUPM-D3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

30 W

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

SOLDER LUG

Terminal Position:

UPPER

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

2000 ns

Maximum Turn On Time (ton):

300 ns

Maximum VCEsat:

2 V

Trade Compliance

2N3999 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

NSN

5961-00-760-0746, 5961007600746, 5961-00-433-5729, 5961004335729

NIIN

007600746, 004335729

PCN

Manufacturer Highlights

General Semiconductor

Vishay General Semiconductor traces its origins to the founding of the Semiconductor Components Division of General Instrument, in Hicksville, New York in 1960. In 1997, the power semiconductor business of General Instrument became an independent, publicly traded company, General Semiconductor. The same year, General Semiconductor acquired the small signal diode business of ITT Industries. Inc. With the acquisition of General Semiconductor in 2001, Vishay Intertechnology joined the top ranks of discrete semiconductor manufacturers and became a market and technology leader in power rectifiers and TVS avalanche breakdown diodes. Today, Vishay General Semiconductor serves a very wide range of customers with devices that can be used as rectifiers, signal limiters, voltage regulators, switches, signal modulators, signal mixers, signal demodulators, and oscillators. Vishay General Semiconductor customers include leading manufacturers of consumer electronics, lighting, telecommunications equipment, computers, and automotive products.

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