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2N3997

Texas Instruments

2N3997 by Texas Instruments

2N3997 by Texas Instruments is a NPN BJT with 80V VCE, 5A IC, and 40MHz fT. Ideal for switching applications, it has a max power dissipation of 2W and operates up to 175°C. Package style is post/stud mount with isolated case connection.

Median Price

$23.250

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

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American Microsemiconductor Inc.

USA . 3 parts In-Stock

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$23.250

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Vyrian

USA . 4,796 parts In-Stock

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Digiode

USA . 4,677 parts In-Stock

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PUI

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Halfin

Belgium . 280 parts In-Stock

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Electronic Expediters

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ComSIT Distribution GmbH

Germany . 106 parts In-Stock

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ES Components

USA . 55 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 22 parts In-Stock

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Holdelec - ElecDif-Pro

France . 22 parts In-Stock

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MISTER SPROCKETS

USA . 8 parts In-Stock

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ICP Electronique

France . 2 parts In-Stock

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Bristol Electronics

USA . 1 parts In-Stock

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Parana Technologies

USA . 355 parts In-Stock

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$1.054

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$1.914

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Native Components

USA . 819 parts In-Stock

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$1.120

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$1.120

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DigiPath Technology Company

USA . 937 parts In-Stock

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$1.160

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$1.067

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$1.160

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ChromeModa Solutions

Germany . 1,254 parts In-Stock

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$1.184

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$0.971

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IDEA Electronic Components Group

UK . 897 parts In-Stock

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$1.184

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$1.066

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Northwest PG Solutions

USA . 1,682 parts In-Stock

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$1.232

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AZTECH Wire

Italy . 229 parts In-Stock

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$9.646

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One Stop Electronics

USA . 1,527 parts In-Stock

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$21.050

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Component Stockers USA

USA . 39 parts In-Stock

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$3,008.950

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Microchip USA

USA . 10,263 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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Corphita

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Overview

Upgrade your power systems with the 2N3997 by Texas Instruments, a top-tier manufacturer known for its high-quality components. This NPN Power Bipolar Junction Transistor is perfect for switching applications, offering a maximum collector current of 5A and a minimum DC current gain of 60. With a maximum operating temperature of 175°C and a maximum collector-emitter voltage of 80V, this transistor ensures optimal performance and reliability. Whether you're designing industrial equipment or automotive electronics, the 2N3997 delivers the value and benefits you need for your projects to succeed.

Feature Benefit Bullets

Package Body Material: METAL

Metal body provides excellent thermal conductivity, allowing for efficient heat dissipation during operation.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications due to their high efficiency and fast switching speeds.

Configuration: SINGLE

Single configuration simplifies circuit design and ensures ease of use in various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, offering reliable performance and fast switching characteristics.

Package Shape: ROUND

Round package shape allows for easy mounting and installation in various electronic devices.

Terminal Form: SOLDER LUG

Solder lug terminals provide a secure and durable connection, ensuring stability in the circuit.

No. of Terminals: 4

4 terminals provide flexibility in circuit design and allow for versatile connections in different setups.

Maximum Power Dissipation (Abs): 2 W

High power dissipation capability of 2 W ensures reliable performance under varying load conditions.

Package Style (Meter): POST/STUD MOUNT

Post/stud mount package style offers easy installation and secure mounting in electronic assemblies.

Minimum DC Current Gain (hFE): 60

Minimum DC current gain of 60 ensures consistent amplification and signal control in the circuit.

Maximum Operating Temperature: 175 °C

Operates efficiently at high temperatures up to 175°C, making it suitable for industrial environments.

Maximum Collector-Emitter Voltage: 80 V

High collector-emitter voltage rating of 80 V allows for reliable performance in high voltage applications.

Transistor Element Material: SILICON

Silicon-based transistor element material offers high performance, low noise, and stable operation over a wide temperature range.

Maximum Collector Current (IC): 5 A

High collector current rating of 5 A enables the transistor to handle heavy loads and high-power applications with ease.

Terminal Position: UPPER

Upper terminal position provides convenient access for connection and ensures proper alignment in the circuit layout.

Case Connection: ISOLATED

Isolated case connection prevents electrical interference and ensures safety in the circuit.

Nominal Transition Frequency (fT): 40 MHz

High nominal transition frequency of 40 MHz allows for fast signal switching and high-frequency operation in electronic circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N3997 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-111

JESD-30 Code:

O-MUPM-D4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

SOLDER LUG

Terminal Position:

UPPER

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N3997 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-442-9454, 5961004429454, 5961-00-482-8491, 5961004828491, 5961-99-140-5246, 5961991405246

NIIN

004429454, 004828491, 991405246

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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