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2N3996

Microchip Technology

2N3996 by Microchip Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Package Style (Meter): POST/STUD MOUNT; Transistor Application: SWITCHING;

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,488 parts In-Stock

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6,488

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Digiode

USA . 809 parts In-Stock

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809

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Q Components

USA . 330 parts In-Stock

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330

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Semi Source

USA . 70 parts In-Stock

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70

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PUI

USA . 25 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 2,222 parts In-Stock

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$0.348

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$1.565

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2,222

$0.348

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DigiPath Technology Company

USA . 1,260 parts In-Stock

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$0.383

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$0.383

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ChromeModa Solutions

Germany . 3,048 parts In-Stock

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$0.391

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$0.321

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3,048

$0.391

$0.321

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IDEA Electronic Components Group

UK . 1,031 parts In-Stock

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$0.391

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$0.352

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Northwest PG Solutions

USA . 257 parts In-Stock

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$2.695

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257

$2.695

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One Stop Electronics

USA . 1,393 parts In-Stock

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$6.050

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$6.050

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AZTECH Wire

Italy . 594 parts In-Stock

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$16.737

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Microchip USA

USA . 7,557 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 7,454 parts In-Stock

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LMD Electronica

Estonia . 6,953 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Montano Global Distributors

Canada . 4,566 parts In-Stock

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CPlus Electronics

USA . 4,000 parts In-Stock

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NIA Electronics

USA . 1,698 parts In-Stock

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Corphita

USA . 1,639 parts In-Stock

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1,639

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RC Electronics

USA . 349 parts In-Stock

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349

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Native Components

USA . 318 parts In-Stock

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$2.377

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318

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Ledger Components

France . 141 parts In-Stock

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LOOK Integrated Logistics

Peru . 112 parts In-Stock

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RTC Component Inc.

USA . 2 parts In-Stock

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Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N3996 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Microchip Technology

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-111

JESD-30 Code:

O-MUPM-X4

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2N3996 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-484-7734, 5961004847734, 5961-99-118-0004, 5961991180004, 5961-99-118-4742, 5961991184742

NIIN

004847734, 991180004, 991184742

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

Category top products 20

Authentic purchasing experiences

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