Loading...

2N3998

Texas Instruments

2N3998 by Texas Instruments

2N3998 by Texas Instruments is a NPN BJT with 80V VCE, 5A IC, and 40MHz fT. Ideal for switching applications, it has a max power dissipation of 2W and operates up to 175°C. Package style is post/stud mount with solder lug terminals.

Median Price

$20.510

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 1 parts In-Stock

1+ parts

$20.510

100+ parts

-

1k+ parts

-

10k+ parts

-

1

$20.510

-

-

-

Vyrian

USA . 8,841 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,841

-

-

-

-

PUI

USA . 1,632 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,632

-

-

-

-

Digiode

USA . 68 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

68

-

-

-

-

Electronic Expediters

USA . 21 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

21

-

-

-

-

LittleDiode

UK . 2 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2

-

-

-

-

R&J Components

USA . 1 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1

-

-

-

-

First Choice Components Inc.

USA . 1 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,034 parts In-Stock

1+ parts

$1.024

100+ parts

-

1k+ parts

$1.894

10k+ parts

-

1,034

$1.024

-

$1.894

-

DigiPath Technology Company

USA . 1,563 parts In-Stock

1+ parts

$1.127

100+ parts

$1.037

1k+ parts

-

10k+ parts

-

1,563

$1.127

$1.037

-

-

IDEA Electronic Components Group

UK . 1,420 parts In-Stock

1+ parts

$1.150

100+ parts

-

1k+ parts

$1.035

10k+ parts

-

1,420

$1.150

-

$1.035

-

ChromeModa Solutions

Germany . 449 parts In-Stock

1+ parts

$1.150

100+ parts

$0.943

1k+ parts

-

10k+ parts

-

449

$1.150

$0.943

-

-

AZTECH Wire

Italy . 361 parts In-Stock

1+ parts

$18.683

100+ parts

-

1k+ parts

-

10k+ parts

-

361

$18.683

-

-

-

One Stop Electronics

USA . 598 parts In-Stock

1+ parts

$54.050

100+ parts

-

1k+ parts

-

10k+ parts

-

598

$54.050

-

-

-

Microchip USA

USA . 9,619 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9,619

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 5,279 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,279

-

-

-

-

Glotronic Ltd.

UK . 2,780 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,780

-

-

-

-

Corphita

USA . 2,759 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,759

-

-

-

-

Northwest PG Solutions

USA . 1,766 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$3.753

10k+ parts

-

1,766

-

-

$3.753

-

Native Components

USA . 813 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$3.715

10k+ parts

-

813

-

-

$3.715

-

West Coast Incorporated

USA . 299 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

299

-

-

-

-

Perfect Parts

USA . 2 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2

-

-

-

-

RTC Component Inc.

USA . 1 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1

-

-

-

-

Overview

Elevate your power management game with the Texas Instruments 2N3998 Power Bipolar Junction Transistor. Known for its superior quality and reliability, Texas Instruments is a trusted manufacturer in the industry. This NPN transistor is ideal for switching applications, offering a maximum collector-emitter voltage of 80V and a maximum collector current of 5A. With a package body material of metal and a package shape of round, this transistor is designed for durability and efficiency. Experience seamless performance and unmatched value with the 2N3998 by Texas Instruments.

Feature Benefit Bullets

Package Body Material: METAL

Metal packages provide better thermal and electrical conductivity, allowing for efficient heat dissipation and improved overall performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering high efficiency and reliability.

Configuration: SINGLE

Single configuration transistors are easy to interface and control, making them suitable for various circuit designs.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and low power consumption.

Package Shape: ROUND

Round packages provide easy mounting and handling, making them ideal for space-constrained applications.

Terminal Form: SOLDER LUG

Solder lug terminals offer secure connections and easy soldering, ensuring reliable performance in various conditions.

Maximum Power Dissipation (Abs): 2 W

With a maximum power dissipation of 2W, this transistor can handle high power loads with minimal risk of overheating.

Package Style (Meter): POST/STUD MOUNT

Post/stud mount packages provide easy installation and secure mounting, making them suitable for rugged environments.

Minimum DC Current Gain (hFE): 30

A minimum DC current gain of 30 indicates good amplification capabilities, ensuring stable performance in amplification circuits.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175°C, this transistor can withstand high temperature conditions without compromising performance.

Maximum Collector-Emitter Voltage: 80 V

A high collector-emitter voltage rating of 80V allows this transistor to handle high voltage applications with ease.

Transistor Element Material: SILICON

Silicon transistors offer high reliability and temperature stability, ensuring consistent performance over a wide range of operating conditions.

Maximum Collector Current (IC): 5 A

With a maximum collector current of 5A, this transistor can handle high current loads without risk of damage or overheating.

Terminal Position: UPPER

Upper terminal position facilitates easy connection and mounting, ensuring reliable performance in various circuit configurations.

Case Connection: COLLECTOR

Collector case connection offers easy heat dissipation and efficient current flow, enhancing overall performance and reliability.

Nominal Transition Frequency (fT): 40 MHz

A high nominal transition frequency of 40MHz indicates fast switching speeds and high-frequency response, making this transistor suitable for high-speed switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N3998 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-111

JESD-30 Code:

O-MUPM-D3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

SOLDER LUG

Terminal Position:

UPPER

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N3998 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-054-5284, 5961000545284

NIIN

000545284

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

New products
from Texas Instruments 7

Similar products 20