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2N3999

Microchip Technology

2N3999 by Microchip Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Terminal Position: UPPER; No. of Elements: 1;

Median Price

$17.890

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

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American Microsemiconductor Inc.

USA . 27 parts In-Stock

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$17.890

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Vyrian

USA . 5,699 parts In-Stock

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Digiode

USA . 2,203 parts In-Stock

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Electronic Expediters

USA . 347 parts In-Stock

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PUI

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ES Components

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Beltway Electronics Company

USA . 15 parts In-Stock

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ZD Integrated Circuits Inc.

USA . 7 parts In-Stock

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Sunrise Surplus Inc.

USA . 2 parts In-Stock

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R&J Components

USA . 1 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 861 parts In-Stock

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$0.440

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$1.604

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DigiPath Technology Company

USA . 2,328 parts In-Stock

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$0.484

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$0.445

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ChromeModa Solutions

Germany . 4,679 parts In-Stock

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$0.494

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IDEA Electronic Components Group

UK . 1,814 parts In-Stock

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Native Components

USA . 353 parts In-Stock

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$1.738

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Northwest PG Solutions

USA . 366 parts In-Stock

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$1.912

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One Stop Electronics

USA . 1,592 parts In-Stock

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$10.050

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AZTECH Wire

Italy . 713 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Microchip USA

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Corphita

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QualityLine Systems

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Marpe Global Electronics

Taiwan . 3,978 parts In-Stock

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XL Components Corporation

Australia . 809 parts In-Stock

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Supply Digital

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Perfect Parts

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RTC Component Inc.

USA . 1 parts In-Stock

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Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N3999 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Microchip Technology

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-59

JESD-30 Code:

O-MUPM-X3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2N3999 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-760-0746, 5961007600746, 5961-00-433-5729, 5961004335729

NIIN

007600746, 004335729

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

Category top products 20

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