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Z0110DA

STMicroelectronics

Z0110DA by STMicroelectronics

Z0110DA by STMicroelectronics is a TRIAC with 3 terminals, max. DC gate trigger current of 25mA, and max. RMS on-state current of 0.8A. It operates b/w -40 to 125 °C, suitable for applications requiring a 4-quadrant logic level TRIAC like dimmer switches and motor speed control in various industries.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,262 parts In-Stock

1+ parts

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2,262

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Vyrian

USA . 2,216 parts In-Stock

1+ parts

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2,216

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Anansix

USA . 76 parts In-Stock

1+ parts

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76

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 333 parts In-Stock

1+ parts

$3.944

100+ parts

-

1k+ parts

$3.550

10k+ parts

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333

$3.944

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$3.550

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MKK Technologies

India . 14 parts In-Stock

1+ parts

$7.417

100+ parts

-

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14

$7.417

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DigiPath Technology Company

USA . 14 parts In-Stock

1+ parts

$7.417

100+ parts

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14

$7.417

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Corphita

USA . 4,602 parts In-Stock

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4,602

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Parana Technologies

USA . 488 parts In-Stock

1+ parts

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100+ parts

$4.716

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488

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$4.716

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Assy Fe

Spain . 280 parts In-Stock

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280

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Overview

Experience high-quality performance and reliability with the Z0110DA by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics ensures top-notch products like this TRIAC for a wide range of applications. With its easy installation and impressive features, the Z0110DA offers customers unmatched value and efficiency. Say goodbye to worries about leakage current or trigger voltage issues and trust in the superior performance of this product. Upgrade your systems today with the Z0110DA and witness the difference it can make!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body makes the product lightweight and durable, ensuring longevity and portability.

Maximum DC Gate Trigger Current: 25 mA

The high maximum DC gate trigger current of 25 mA ensures reliable and efficient operation of the TRIAC, allowing it to be triggered easily and effectively.

Configuration: SINGLE

The single configuration simplifies the design and installation process, making it easier to integrate this TRIAC into various electronic systems.

Package Shape: ROUND

The round package shape offers versatility in mounting options and allows for easy integration into different types of circuit designs.

Terminal Form: THROUGH-HOLE

The through-hole terminal form ensures stable and secure connections, making it easier to solder and install the TRIAC onto a circuit board.

Maximum Leakage Current: 0.2 mA

The low maximum leakage current of 0.2 mA minimizes power loss and enhances the efficiency of the TRIAC, making it a reliable choice for energy-efficient applications.

No. of Terminals: 3

Having 3 terminals allows for easy connection and integration into various circuit designs, offering flexibility and versatility in application usage.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides a compact and space-saving design, making it ideal for applications where size is a critical factor.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, this TRIAC can withstand high temperatures, ensuring reliable performance in harsh environments.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

The 4 quadrant logic level TRIAC enables precise control and switching of AC power, making it suitable for a wide range of industrial and consumer electronics applications.

Minimum Operating Temperature: -40 °C

The minimum operating temperature of -40 °C allows for reliable performance even in cold environments, making it suitable for a variety of applications in different climates.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides corrosion resistance and ensures a reliable connection, contributing to the long-term durability of the TRIAC.

Terminal Position: BOTTOM

The bottom terminal position facilitates easy and efficient heat dissipation, ensuring optimal performance and reliability of the TRIAC.

Maximum RMS On-state Current: 0.8 A

The high maximum RMS on-state current of 0.8 A allows the TRIAC to handle high-power applications with ease, making it suitable for a wide range of industrial and consumer electronics.

Maximum DC Gate Trigger Voltage: 2 V

The low maximum DC gate trigger voltage of 2 V ensures efficient and reliable triggering of the TRIAC, enhancing its performance and usability in various applications.

Repetitive Peak Off-state Voltage: 400 V

The repetitive peak off-state voltage of 400 V provides robust protection against voltage spikes and surges, ensuring the safety and reliability of the connected equipment.

Minimum Critical Rate of Rise of Commutation Voltage: 4 V/us

The minimum critical rate of rise of commutation voltage of 4 V/us ensures fast and efficient switching of the TRIAC, reducing the risk of voltage transients and enhancing the reliability of the circuit.

Minimum Critical Rate of Rise of Off-state Voltage: 100 V/us

The minimum critical rate of rise of off-state voltage of 100 V/us ensures stable and reliable operation of the TRIAC, reducing the risk of false triggering and improving overall performance.

Maximum Holding Current: 25 mA

The maximum holding current of 25 mA ensures stable operation and reliable latching of the TRIAC, preventing unintended turn-off and ensuring consistent performance.

Technical Specifications

Triode For Alternating Current (TRIAC) Z0110DA attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Additional Features:

SENSITIVE GATE

Configuration:

Minimum Critical Rate of Rise of Commutation Voltage:

4 V/us

Minimum Critical Rate of Rise of Off-state Voltage:

100 V/us

Maximum DC Gate Trigger Current:

25 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

25 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

Maximum Leakage Current:

.2 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

Z0110DA Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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