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Z0110NA5AL2

STMicroelectronics

Z0110NA5AL2 by STMicroelectronics

Z0110NA5AL2 by STMicroelectronics is a single TRIAC designed for AC applications, featuring a max RMS on-state current of 1 A and a repetitive peak off-state voltage of 800 V. It operates b/w -40 °C to 125 °C with a gate trigger current of 25 mA. Ideal for controlling power in lighting and motor circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,062 parts In-Stock

1+ parts

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4,062

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Anansix

USA . 1,143 parts In-Stock

1+ parts

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1k+ parts

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1,143

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Digiode

USA . 193 parts In-Stock

1+ parts

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193

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 736 parts In-Stock

1+ parts

$4.249

100+ parts

-

1k+ parts

$3.824

10k+ parts

-

736

$4.249

-

$3.824

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MKK Technologies

India . 1,769 parts In-Stock

1+ parts

$7.989

100+ parts

-

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10k+ parts

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1,769

$7.989

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DigiPath Technology Company

USA . 1,769 parts In-Stock

1+ parts

$7.989

100+ parts

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-

10k+ parts

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1,769

$7.989

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Parana Technologies

USA . 1,880 parts In-Stock

1+ parts

-

100+ parts

$5.080

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1,880

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$5.080

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Corphita

USA . 917 parts In-Stock

1+ parts

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917

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Overview

Elevate your projects with the Z0110NA5AL2 TRIAC from STMicroelectronics, a trusted leader in semiconductor innovation. This high-quality device offers reliable performance across various applications, ensuring efficient control of AC loads while maximizing energy savings. With robust thermal stability and minimal leakage current, it’s perfect for automotive, industrial, and consumer electronics. Choose Z0110NA5AL2 for unmatched quality that drives your success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy material enhances the product's resistance to environmental factors, ensuring longevity and reliability.

Maximum DC Gate Trigger Current: 25 mA

A maximum DC gate trigger current of 25 mA allows for efficient triggering without excessive power consumption, making it energy-efficient.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, providing ease of use in various electronic applications.

Package Shape: RECTANGULAR

A rectangular package shape aids in effective space utilization on PCBs, making it ideal for compact designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical stability and are suitable for high-power applications that require secure connections.

Maximum Leakage Current: 0.5 mA

Low maximum leakage current minimizes unwanted power loss, enhancing the energy efficiency of the overall system.

No. of Terminals: 3

With 3 terminals, this TRIAC is versatile for various circuit configurations, enabling flexible design options.

Package Style (Meter): CYLINDRICAL

The cylindrical package style allows for streamlined integration into electronic devices, contributing to overall aesthetic and functionality.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature ensures reliable performance even in demanding environments, making it suitable for a wide range of applications.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

The 4 quadrant capability enables the TRIAC to control AC loads in both directions, offering versatility in controlling power.

Minimum Operating Temperature: -40 °C

A low minimum operating temperature allows the TRIAC to perform reliably in extreme cold conditions, expanding its applicability.

Terminal Finish: MATTE TIN

The matte tin terminal finish enhances solderability, ensuring secure and reliable connections during assembly.

Terminal Position: BOTTOM

Bottom terminal positioning facilitates effective grounding and space efficiency in circuit layouts, optimizing design.

Maximum RMS On-state Current: 1 A

A maximum RMS on-state current of 1 A provides sufficient capacity for controlling moderate power loads effectively.

Maximum DC Gate Trigger Voltage: 1.3 V

Low gate trigger voltage simplifies the drive circuitry, allowing for easy integration with low-voltage control systems.

Repetitive Peak Off-state Voltage: 800 V

High off-state voltage capability ensures the TRIAC can handle substantial voltage levels, making it suitable for high-voltage applications.

Minimum Critical Rate of Rise of Off-state Voltage: 100 V/µs

The specified rise rate supports rapid voltage changes, making the TRIAC dependable in high-speed switching applications.

Maximum Holding Current: 25 mA

The low maximum holding current ensures efficient operation and prevents undesired triggering under normal load conditions.

Technical Specifications

Triode For Alternating Current (TRIAC) Z0110NA5AL2 attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Additional Features:

SENSITIVE GATE

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

100 V/us

Maximum DC Gate Trigger Current:

25 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

25 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

R-PBCY-T3

JESD-609 Code:

e3

Maximum Leakage Current:

.5 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

1 A

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

Z0110NA5AL2 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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