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Z0110NA

STMicroelectronics

Z0110NA by STMicroelectronics

Z0110NA by STMicroelectronics is a single TRIAC with 3 terminals, capable of handling 1A RMS on-state current and 800V repetitive peak off-state voltage. It operates b/w -40 to 125 °C, making it suitable for various AC power control applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,127 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,127

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-

-

-

Digiode

USA . 3,033 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,033

-

-

-

-

Anansix

USA . 2,586 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

2,586

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,286 parts In-Stock

1+ parts

$2.417

100+ parts

-

1k+ parts

$2.175

10k+ parts

-

1,286

$2.417

-

$2.175

-

MKK Technologies

India . 1,638 parts In-Stock

1+ parts

$4.545

100+ parts

-

1k+ parts

-

10k+ parts

-

1,638

$4.545

-

-

-

DigiPath Technology Company

USA . 1,638 parts In-Stock

1+ parts

$4.545

100+ parts

-

1k+ parts

-

10k+ parts

-

1,638

$4.545

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-

-

Parana Technologies

USA . 688 parts In-Stock

1+ parts

-

100+ parts

$2.890

1k+ parts

-

10k+ parts

-

688

-

$2.890

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Corphita

USA . 245 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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245

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Overview

Unleash the power of the Z0110NA by STMicroelectronics, a top-quality TRIAC that exceeds all expectations. Crafted by the renowned manufacturer STMicroelectronics, this device delivers unparalleled performance and reliability. Ideal for a wide range of applications, this TRIAC offers seamless control over alternating current with ease. Experience the value and benefits of this product as it provides customers with efficiency, precision, and peace of mind. Elevate your projects with the Z0110NA and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures the package is durable and can withstand the environmental conditions, making it a reliable choice for various applications.

Maximum DC Gate Trigger Current: 25 mA

With a high maximum DC gate trigger current, this TRIAC can easily be triggered, providing efficient and smooth operation.

Configuration: SINGLE

The single configuration simplifies the design and installation process, making it user-friendly and easy to integrate into circuits.

Package Shape: ROUND

The round package shape allows for easy mounting and integration into different types of assemblies, providing versatility in application.

Terminal Form: THROUGH-HOLE

The through-hole terminal form ensures secure connections, reducing the risk of loose connections and enhancing the overall durability of the product.

Maximum Leakage Current: 0.2 mA

With a low maximum leakage current, this TRIAC helps in minimizing power losses and improving efficiency in operation.

No. of Terminals: 3

The three terminals provide flexibility in wiring configurations, enabling the TRIAC to be used in a variety of circuit designs.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers a compact and space-saving design, making it suitable for applications where size constraints may be a concern.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this TRIAC can withstand elevated temperature environments, ensuring reliable performance under challenging conditions.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

The 4 quadrant logic level design provides precise control over the switching operation, offering versatility in managing power levels in various applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows this TRIAC to function effectively even in cold environments, ensuring reliable operation in a wide range of conditions.

Terminal Finish: MATTE TIN

The matte tin terminal finish enhances solderability and conductivity, ensuring secure connections and reliable performance in different applications.

Terminal Position: BOTTOM

The bottom terminal position facilitates easy installation and soldering processes, simplifying the assembly and maintenance of the product.

Maximum RMS On-state Current: 1 A

With a high maximum RMS on-state current, this TRIAC can handle substantial current loads, making it suitable for applications requiring high power output.

Maximum DC Gate Trigger Voltage: 2 V

The low maximum DC gate trigger voltage allows for efficient triggering with minimal power consumption, enhancing the overall energy efficiency of the product.

Repetitive Peak Off-state Voltage: 800 V

The high repetitive peak off-state voltage rating ensures reliable performance and protection against voltage spikes, making it suitable for demanding applications.

Minimum Critical Rate of Rise of Commutation Voltage: 4 V/us

The minimum critical rate of rise of commutation voltage ensures fast and efficient switching, reducing the risk of voltage spikes and enhancing the overall reliability of the product.

Minimum Critical Rate of Rise of Off-state Voltage: 100 V/us

The high minimum critical rate of rise of off-state voltage protects the TRIAC against sudden voltage changes, ensuring stable operation and extended longevity.

Maximum Holding Current: 25 mA

With a high maximum holding current, this TRIAC can maintain its on-state conduction even after the gate trigger signal is removed, providing stability in operation.

Technical Specifications

Triode For Alternating Current (TRIAC) Z0110NA attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Additional Features:

SENSITIVE GATE

Configuration:

Minimum Critical Rate of Rise of Commutation Voltage:

4 V/us

Minimum Critical Rate of Rise of Off-state Voltage:

100 V/us

Maximum DC Gate Trigger Current:

25 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

25 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

Maximum Leakage Current:

.2 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

1 A

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

Z0110NA Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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