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TYN204/F5

STMicroelectronics

TYN204/F5 by STMicroelectronics

STMicroelectronics TYN204/F5 is a single SCR with 200V reverse voltage, 4A RMS current, and 15mA gate trigger current. Ideal for applications requiring reliable power control in temperatures ranging from -40 °C to 125°C. Package style: flange mount, terminals: through-hole, and holding current of 30mA.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,988 parts In-Stock

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3,988

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Vyrian

USA . 3,869 parts In-Stock

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3,869

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Anansix

USA . 765 parts In-Stock

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765

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 643 parts In-Stock

1+ parts

$4.071

100+ parts

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$3.664

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643

$4.071

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$3.664

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MKK Technologies

India . 570 parts In-Stock

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$7.655

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570

$7.655

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DigiPath Technology Company

USA . 570 parts In-Stock

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$7.655

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570

$7.655

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Corphita

USA . 2,266 parts In-Stock

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Parana Technologies

USA . 2,257 parts In-Stock

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$4.868

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2,257

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$4.868

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Overview

Unlock the power of high-quality Silicon Controlled Rectifiers with the TYN204/F5 by STMicroelectronics. Designed to deliver reliable performance and durability, this SCR offers customers a versatile solution for a wide range of applications. With its advanced technology and superior design, the TYN204/F5 provides value, benefits, and advantages that meet the needs of demanding customers. Trust in STMicroelectronics, a leading manufacturer known for excellence in semiconductor technology, to deliver innovative solutions that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and protection for the internal components of the SCR, ensuring durability and longevity.

Maximum DC Gate Trigger Current: 15 mA

With a maximum gate trigger current of 15 mA, this SCR is easy to control and trigger, making it suitable for a wide range of applications.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes the SCR easy to integrate into existing systems.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and installation of the SCR in various electronic devices and systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and make it easy to solder the SCR onto a PCB or other electronic components.

Repetitive Peak Reverse Voltage: 200 V

A high repetitive peak reverse voltage rating of 200V ensures the SCR can handle high voltage applications safely and reliably.

Maximum Repetitive Peak Off-state Leakage Current: 10 uA

Low off-state leakage current of 10 uA indicates minimal power loss when the SCR is in the off state, resulting in higher efficiency.

No. of Terminals: 3

Three terminals provide the necessary connections for proper operation of the SCR and allow for easy integration into circuits.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers secure mounting and ensures proper heat dissipation, making the SCR suitable for high-power applications.

Maximum Operating Temperature: 125 °C

High maximum operating temperature of 125 °C allows the SCR to operate reliably in harsh environmental conditions without risking damage.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier (SCR) ensures reliable switching performance and high power handling capabilities, making it suitable for various applications.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature of -40 °C ensures the SCR can function even in extreme cold conditions, providing versatility in different environments.

Maximum RMS On-state Current: 4 A

High maximum RMS on-state current rating of 4A indicates the SCR can handle high current loads without overheating, making it ideal for power applications.

Maximum DC Gate Trigger Voltage: 1.5 V

Low gate trigger voltage of 1.5V ensures easy and efficient triggering of the SCR, improving control and responsiveness in the circuit.

Repetitive Peak Off-state Voltage: 200 V

Repetitive peak off-state voltage rating of 200V ensures stable performance in off-state conditions, reducing the risk of malfunction or damage.

Minimum Critical Rate of Rise of Off-state Voltage: 200 V/us

A minimum critical rate of rise of off-state voltage of 200 V/us indicates the SCR can quickly respond to changes in voltage, enhancing safety and reliability.

Maximum Holding Current: 30 mA

High maximum holding current of 30 mA ensures the SCR can maintain conduction even after the triggering signal is removed, improving stability in the circuit.

Nominal Circuit Commutated Turn-off Time: 70 us

Nominal circuit commutated turn-off time of 70 us indicates quick turn-off response, allowing for efficient switching and improved performance in the circuit.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TYN204/F5 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Nominal Circuit Commutated Turn-off Time:

70 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

200 V/us

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

30 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

4 A

Maximum Repetitive Peak Off-state Leakage Current:

10 uA

Repetitive Peak Off-state Voltage:

200 V

Repetitive Peak Reverse Voltage:

200 V

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TYN204/F5 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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