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TYN206

STMicroelectronics

TYN206 by STMicroelectronics

TYN206 by STMicroelectronics is a single SCR in a rectangular plastic/epoxy package, ideal for power control applications. It features a max DC gate trigger current of 15 mA, non-repetitive peak on-state current of 80 A, and operates b/w -40 °C to 125°C. This device ensures efficient performance with low leakage currents and robust voltage handling up to 200 V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,656 parts In-Stock

1+ parts

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4,656

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Vyrian

USA . 2,737 parts In-Stock

1+ parts

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1k+ parts

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2,737

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Anansix

USA . 2,183 parts In-Stock

1+ parts

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2,183

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,366 parts In-Stock

1+ parts

$1.857

100+ parts

-

1k+ parts

$1.671

10k+ parts

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2,366

$1.857

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$1.671

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MKK Technologies

India . 144 parts In-Stock

1+ parts

$3.491

100+ parts

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144

$3.491

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DigiPath Technology Company

USA . 144 parts In-Stock

1+ parts

$3.491

100+ parts

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144

$3.491

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Corphita

USA . 2,496 parts In-Stock

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2,496

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Parana Technologies

USA . 1,466 parts In-Stock

1+ parts

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100+ parts

$2.220

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1,466

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$2.220

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Overview

Unlock the power of precision and reliability with the TYN206 from STMicroelectronics! This versatile Silicon Controlled Rectifier (SCR) is designed for high-performance applications, ensuring optimal efficiency across various industries. With an impressive on-state current handling and robust thermal capabilities, the TYN206 guarantees durability and longevity. Trust in STMicroelectronics' renowned quality to elevate your projects, providing unmatched performance and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durable and lightweight construction, ensuring reliability in various applications.

Maximum DC Gate Trigger Current: 15 mA

With a low gate trigger current, this SCR ensures efficient performance, minimizing energy consumption and heat generation.

Configuration: SINGLE

The single configuration simplifies circuit design and integration into applications, making it a versatile choice.

Non Repetitive Peak On-state Current: 80 A

High peak on-state current capability allows for handling substantial loads, making it suitable for heavy-duty applications.

Package Shape: RECTANGULAR

The rectangular shape aids in compact mounting in electronic systems, optimizing space utilization.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical support and facilitate easier soldering to PCB, enhancing reliability.

Maximum On-state Current: 6 A

With a significant maximum on-state current, this device can effectively manage power in various applications.

Maximum Leakage Current: 2 mA

Low leakage current ensures energy efficiency and reduces the risk of overheating in circuits.

Repetitive Peak Reverse Voltage: 200 V

High repetitive reverse voltage rating allows for safe operation in high-voltage environments, expanding its usability.

Maximum Repetitive Peak Off-state Leakage Current: 10 uA

Minimal off-state leakage current signifies low energy waste and enhanced safety in applications.

No. of Terminals: 3

The three-terminal design simplifies connections and increases circuit design flexibility.

Package Style (Meter): FLANGE MOUNT

Flange mount style provides secure attachment options in various mounting scenarios, increasing installation options.

Maximum Operating Temperature: 125 °C

The ability to operate at high temperatures makes this SCR suitable for demanding applications without thermal failures.

Trigger Device Type: SCR

Being a silicon-controlled rectifier, it offers efficient control of power, making it ideal for phase control and switching.

Minimum Operating Temperature: -40 °C

Capable of functioning in extremely low temperatures ensures reliability in harsh environmental conditions.

Terminal Finish: MATTE TIN

Matte tin finish enhances solderability and prevents corrosion, ensuring long-term reliability of the connections.

Terminal Position: SINGLE

Single terminal positioning allows for simpler and cleaner layout in designs, reducing complexity.

Maximum RMS On-state Current: 6 A

Significant RMS on-state current capability allows for effective power management in various systems.

Maximum DC Gate Trigger Voltage: 1.5 V

Low gate trigger voltage leads to lower power consumption, enhancing efficiency in circuit designs.

Repetitive Peak Off-state Voltage: 200 V

High off-state voltage ensures safe operation in high-voltage systems, making it suitable for diverse applications.

Minimum Critical Rate of Rise of Off-state Voltage: 200 V/us

A high voltage rise rate capability protects devices from damage and increases application versatility.

Maximum Holding Current: 30 mA

The ability to hold current effectively allows for stable performance, suitable for load regulation tasks.

Nominal Circuit Commutated Turn-off Time: 70 µs

Fast turn-off time contributes to efficient power management and reduces heat buildup, improving overall reliability.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TYN206 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Nominal Circuit Commutated Turn-off Time:

70 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

200 V/us

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

30 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

80 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

6 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

6 A

Maximum Repetitive Peak Off-state Leakage Current:

10 uA

Repetitive Peak Off-state Voltage:

200 V

Repetitive Peak Reverse Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TYN206 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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