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TYN208G

STMicroelectronics

TYN208G by STMicroelectronics

TYN208G by STMicroelectronics is a single SCR in a rectangular plastic package, ideal for power control applications. It features a max DC gate trigger current of 25 mA, non-repetitive peak on-state current of 84 A, and operates b/w -40 °C to 125°C. This device excels in managing high voltages with a repetitive peak reverse voltage of 200 V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,112 parts In-Stock

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3,112

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Anansix

USA . 2,183 parts In-Stock

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2,183

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Digiode

USA . 167 parts In-Stock

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167

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,276 parts In-Stock

1+ parts

$4.086

100+ parts

-

1k+ parts

$3.677

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1,276

$4.086

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$3.677

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MKK Technologies

India . 290 parts In-Stock

1+ parts

$7.683

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290

$7.683

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DigiPath Technology Company

USA . 290 parts In-Stock

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$7.683

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290

$7.683

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Parana Technologies

USA . 1,804 parts In-Stock

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$4.885

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1,804

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$4.885

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Corphita

USA . 1,017 parts In-Stock

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1,017

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Overview

Experience unmatched reliability and performance with the TYN208G from STMicroelectronics, a leader in semiconductor innovation. This Silicon Controlled Rectifier (SCR) is engineered for durability, making it ideal for diverse applications like power management, motor control, and lighting systems. Its robust design ensures efficient operation even in demanding environments, providing exceptional value and peace of mind to customers seeking quality and performance without compromise.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy material ensures robust protection against environmental factors, enhancing the longevity of the SCR.

Maximum DC Gate Trigger Current: 25 mA

A moderate trigger current requirement makes it compatible with a variety of control circuits while minimizing power consumption.

Configuration: SINGLE

The single configuration is straightforward and easy to integrate into various applications without the complexity of multiple devices.

Non Repetitive Peak On-state Current: 84 A

The high non-repetitive peak on-state current rating allows for handling of significant load conditions, making it suitable for demanding applications.

Package Shape: RECTANGULAR

The rectangular shape provides efficient space utilization on PCBs, facilitating compact designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer reliable mechanical support and excellent electrical connection, ideal for high-stress applications.

Maximum On-state Current: 5 A

The maximum on-state current capability supports moderate load applications while providing reliable performance.

Maximum Leakage Current: 2 mA

Low leakage current enhances energy efficiency and reduces heat generation, making it more suitable for low-power circuits.

Repetitive Peak Reverse Voltage: 200 V

A high repetitive peak reverse voltage rating ensures the device can withstand significant voltage spikes, increasing overall system reliability.

Maximum Repetitive Peak Off-state Leakage Current: 10 uA

Minimal off-state leakage current contributes to energy savings and improved overall system efficiency.

No. of Terminals: 3

With three terminals, this SCR is designed for efficient control and connectivity in various configurations.

Package Style (Meter): FLANGE MOUNT

Flange mount style allows for easy mounting and stable installation in various setups.

Maximum Operating Temperature: 125 °C

A high operating temperature limits ensure reliable performance in demanding conditions, expanding application possibilities.

Trigger Device Type: SCR

As an SCR, this device enables reliable control of high power in various applications, such as motor control and power supply.

Minimum Operating Temperature: -40 °C

The ability to operate in low temperatures increases versatility and usability in harsh environments.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides excellent solderability and corrosion resistance, enhancing the quality of connections.

Terminal Position: SINGLE

Single terminal position simplifies design and installation, preventing confusion during setup.

Maximum RMS On-state Current: 8 A

The high RMS on-state current capability enhances performance for continuous load applications.

Maximum DC Gate Trigger Voltage: 1.5 V

Low trigger voltage requirements permit compatibility with a range of control devices, facilitating integration.

Repetitive Peak Off-state Voltage: 200 V

Capable of withstanding high off-state voltages, this SCR ensures reliable performance even in voltage fluctuation scenarios.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/us

A high critical rate of rise means it can handle fast voltage changes, improving circuit performance and robustness.

Maximum Holding Current: 45 mA

A high holding current rating allows for stable operation under varying load conditions, improving reliability.

Nominal Circuit Commutated Turn-off Time: 70 us

Fast turn-off time makes this SCR suitable for high-frequency applications, enhancing the efficiency of switching operations.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TYN208G attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Nominal Circuit Commutated Turn-off Time:

70 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

25 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

45 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

84 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

5 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Maximum Repetitive Peak Off-state Leakage Current:

10 uA

Repetitive Peak Off-state Voltage:

200 V

Repetitive Peak Reverse Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TYN208G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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