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TN2540-12G-TR

STMicroelectronics

TN2540-12G-TR by STMicroelectronics

TN2540-12G-TR by STMicroelectronics is a single SCR in a compact rectangular package, ideal for high-voltage applications. It supports a max repetitive peak reverse voltage of 1200 V and can handle up to 314 A non-repetitive peak on-state current. With an operating temp range of -40 °C to 125 °C, it's perfect for demanding environments.

Median Price

$2.995

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 6 parts In-Stock

1+ parts

$2.750

100+ parts

$1.270

1k+ parts

$1.070

10k+ parts

-

6

$2.750

$1.270

$1.070

-

Mouser Electronics

USA . 1,414 parts In-Stock

1+ parts

$3.240

100+ parts

$1.500

1k+ parts

$1.100

10k+ parts

-

1,414

$3.240

$1.500

$1.100

-

DigiKey

USA . 432 parts In-Stock

1+ parts

$3.300

100+ parts

$1.493

1k+ parts

$1.046

10k+ parts

$0.960

432

$3.300

$1.493

$1.046

$0.960

Newark

USA . 350 parts In-Stock

1+ parts

$3.720

100+ parts

$1.980

1k+ parts

$1.580

10k+ parts

-

350

$3.720

$1.980

$1.580

-

Verical

USA . 350 parts In-Stock

1+ parts

-

100+ parts

$2.241

1k+ parts

$2.173

10k+ parts

-

350

-

$2.241

$2.173

-

Element14

Singapore . 6 parts In-Stock

1+ parts

-

100+ parts

$2.180

1k+ parts

$1.560

10k+ parts

-

6

-

$2.180

$1.560

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,934 parts In-Stock

1+ parts

$1.210

100+ parts

-

1k+ parts

-

10k+ parts

-

1,934

$1.210

-

-

-

Digiode

USA . 2,534 parts In-Stock

1+ parts

$2.366

100+ parts

-

1k+ parts

-

10k+ parts

-

2,534

$2.366

-

-

-

Anansix

USA . 1,108 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,108

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 319 parts In-Stock

1+ parts

$1.845

100+ parts

-

1k+ parts

$1.660

10k+ parts

-

319

$1.845

-

$1.660

-

Corphita

USA . 3,554 parts In-Stock

1+ parts

$2.241

100+ parts

-

1k+ parts

-

10k+ parts

-

3,554

$2.241

-

-

-

MKK Technologies

India . 2,288 parts In-Stock

1+ parts

$3.469

100+ parts

-

1k+ parts

-

10k+ parts

-

2,288

$3.469

-

-

-

DigiPath Technology Company

USA . 2,288 parts In-Stock

1+ parts

$3.469

100+ parts

-

1k+ parts

-

10k+ parts

-

2,288

$3.469

-

-

-

Microchip USA

USA . 9,251 parts In-Stock

1+ parts

$8.805

100+ parts

-

1k+ parts

-

10k+ parts

-

9,251

$8.805

-

-

-

Parana Technologies

USA . 2,045 parts In-Stock

1+ parts

-

100+ parts

$2.206

1k+ parts

-

10k+ parts

-

2,045

-

$2.206

-

-

Continental Prestige Electronics

USA . 1,339 parts In-Stock

1+ parts

-

100+ parts

$1.610

1k+ parts

$1.100

10k+ parts

-

1,339

-

$1.610

$1.100

-

Eastek

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Overview

Unlock the power of reliable control with the TN2540-12G-TR from STMicroelectronics. This top-tier Silicon Controlled Rectifier (SCR) combines exceptional performance with robust design, ensuring seamless operation in high-demand applications like motor drives and power management systems. With ST's renowned quality and innovation, this component guarantees durability and efficiency, empowering your projects to thrive with unmatched reliability and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and resistance to environmental factors, making this SCR suitable for various applications.

Maximum DC Gate Trigger Current: 40 mA

A maximum gate trigger current of 40 mA allows for efficient switching, ensuring lower power consumption during operation.

Configuration: SINGLE

A single configuration simplifies the circuit design, making it easier to integrate into existing systems.

Non Repetitive Peak On-state Current: 314 A

With a non-repetitive peak on-state current of 314 A, this SCR is capable of handling high current surges, providing robustness under heavy load conditions.

Surface Mount: YES

The surface mount design allows for compact PCB layouts and easy assembly, optimizing space in modern electronic devices.

Package Shape: RECTANGULAR

The rectangular package shape aids in efficient space utilization, allowing for flexible application in various designs.

Terminal Form: GULL WING

Gull wing terminals facilitate reliable soldering to PCBs, enhancing mechanical stability and conductivity.

Maximum On-state Current: 1.2 A

A maximum on-state current of 1.2 A ensures stable performance in applications requiring controlled current flow.

Repetitive Peak Reverse Voltage: 1200 V

The high repetitive peak reverse voltage rating of 1200 V makes this SCR suitable for high-voltage applications, ensuring reliability under extreme conditions.

Maximum Repetitive Peak Off-state Leakage Current: 10 uA

A low leakage current of 10 uA contributes to energy efficiency and minimizes heat generation during operation.

No. of Terminals: 2

The dual terminal design simplifies connections, allowing for straightforward integration into circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package style contributes to space-saving designs in compact electronic applications.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature of 125 °C allows for reliable performance in demanding environments, expanding application versatility.

Trigger Device Type: SCR

As a Silicon Controlled Rectifier, this device offers reliable current control and switching capabilities, ideal for various semiconductor applications.

Minimum Operating Temperature: -40 °C

The wide operational temperature range from -40 °C allows for deployment in harsher environments, enhancing product flexibility.

Terminal Position: SINGLE

The single terminal position provides a straightforward layout for circuit design, facilitating ease of use.

Maximum RMS On-state Current: 25 A

With a maximum RMS on-state current of 25 A, this SCR is capable of handling substantial loads in a variety of applications.

Maximum DC Gate Trigger Voltage: 1.3 V

A low gate trigger voltage of 1.3 V leads to reduced power requirements for triggering, improving efficiency.

Case Connection: ANODE

An anode case connection provides consistent and reliable circuit integration, enhancing overall performance.

Repetitive Peak Off-state Voltage: 1200 V

The same high peak off-state voltage rating of 1200 V further confirms the device's reliability in high-voltage tasks.

Minimum Critical Rate of Rise of Off-state Voltage: 1500 V/us

A minimum critical rate of rise of 1500 V/μs ensures fast switching capabilities, enabling efficient control in rapid signal applications.

Maximum Holding Current: 80 mA

An 80 mA maximum holding current allows for stable operational characteristics, helping maintain consistent performance in various conditions.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TN2540-12G-TR attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

1500 V/us

Maximum DC Gate Trigger Current:

40 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

80 mA

JESD-30 Code:

R-PSSO-G2

Non Repetitive Peak On-state Current:

314 A

No. of Elements:

1

No. of Terminals:

2

Maximum On-state Current:

1.2 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

25 A

Maximum Repetitive Peak Off-state Leakage Current:

10 uA

Repetitive Peak Off-state Voltage:

1200 V

Repetitive Peak Reverse Voltage:

1200 V

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

TN2540-12G-TR Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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