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TN2540-1000G-TR

STMicroelectronics

TN2540-1000G-TR by STMicroelectronics

TN2540-1000G-TR by STMicroelectronics is a single SCR in a rectangular plastic package, ideal for high-power applications. It features a max on-state current of 16 A, non-repetitive peak on-state current of 314 A, and operates b/w -40 °C to 125°C. This component is perfect for controlling large loads efficiently.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,643 parts In-Stock

1+ parts

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4,643

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Digiode

USA . 2,969 parts In-Stock

1+ parts

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2,969

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Anansix

USA . 1,242 parts In-Stock

1+ parts

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1,242

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,766 parts In-Stock

1+ parts

$3.999

100+ parts

-

1k+ parts

$3.599

10k+ parts

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1,766

$3.999

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$3.599

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MKK Technologies

India . 1,722 parts In-Stock

1+ parts

$7.520

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1,722

$7.520

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DigiPath Technology Company

USA . 1,722 parts In-Stock

1+ parts

$7.520

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1,722

$7.520

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Corphita

USA . 1,800 parts In-Stock

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1,800

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Parana Technologies

USA . 46 parts In-Stock

1+ parts

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100+ parts

$4.782

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46

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$4.782

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Overview

Elevate your projects with the TN2540-1000G-TR from STMicroelectronics, a leader in cutting-edge semiconductor technology. This robust Silicon Controlled Rectifier promises unmatched reliability and efficiency for various applications, from power regulation to motor control. With its compact design and superior performance, it effortlessly meets high demands while ensuring safety and durability, giving you peace of mind and enhancing your innovative solutions. Choose STMicroelectronics for unparalleled quality and value!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable plastic/epoxy material ensures reliability and protection from environmental factors, making the SCR suitable for various applications.

Maximum DC Gate Trigger Current: 40 mA

A relatively high gate trigger current allows for better control and operation in a wide range of circuit designs.

Configuration: SINGLE

Single configuration simplifies the circuit design and space requirements in electronic applications.

Non Repetitive Peak On-state Current: 314 A

The ability to handle high non-repetitive peak on-state current demonstrates the robustness of this SCR for demanding applications.

Surface Mount: YES

Being surface mount facilitates compact designs and reduces assembly costs, making it a versatile option for modern electronics.

Package Shape: RECTANGULAR

The rectangular package shape is beneficial for space optimization on PCBs, enhancing overall circuit design.

Terminal Form: GULL WING

Gull wing terminals provide strong physical connections, which improve soldering quality and enhance reliability.

Maximum On-state Current: 16 A

This maximum value indicates good performance in handling current loads, making it suitable for various power applications.

Maximum Leakage Current: 4 mA

Low leakage current improves energy efficiency, reduces heat generation, and ensures better overall system performance.

Repetitive Peak Reverse Voltage: 1000 V

High reverse voltage capability enhances durability and makes it ideal for high-voltage applications.

No. of Terminals: 2

The two-terminal design simplifies circuit configurations and reduces the potential for connection issues.

Package Style (Meter): SMALL OUTLINE

A small outline package style minimizes board space usage, allowing for more compact circuit designs.

Maximum Operating Temperature: 125 °C

Withstands high operational temperatures, making it suitable for harsh environments and demanding applications.

Trigger Device Type: SCR

As a Silicon Controlled Rectifier, it offers efficient control of power and can switch large loads with minimal power dissipation.

Minimum Operating Temperature: -40 °C

Wide operating temperature range signifies reliability and performance in extreme conditions, enhancing application versatility.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance, ensuring long-term reliability in various environments.

Terminal Position: SINGLE

Single terminal position simplifies layout and reduces design complexity when integrating into circuits.

Maximum RMS On-state Current: 25 A

High RMS current capacity allows this SCR to handle significant loads efficiently, making it ideal for power control applications.

Maximum DC Gate Trigger Voltage: 1.3 V

Low gate trigger voltage enhances efficiency and ensures compatibility with a wide range of control circuits.

Case Connection: ANODE

Anode connection facilitates straightforward circuit design and integration within power electronics.

Repetitive Peak Off-state Voltage: 1000 V

The ability to withstand high off-state voltage contributes to its robustness, enabling use in high-voltage applications safely.

Minimum Critical Rate of Rise of Off-state Voltage: 1000 V/us

A fast rise time prevents damage from voltage spikes, enhancing safety and reliability in dynamic environments.

Maximum Holding Current: 50 mA

A maximum holding current of 50 mA allows for effective control over the SCR operation, providing reliability in various circuit designs.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TN2540-1000G-TR attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

1000 V/us

Maximum DC Gate Trigger Current:

40 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

50 mA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Maximum Leakage Current:

4 mA

Non Repetitive Peak On-state Current:

314 A

No. of Elements:

1

No. of Terminals:

2

Maximum On-state Current:

16 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

25 A

Repetitive Peak Off-state Voltage:

1000 V

Repetitive Peak Reverse Voltage:

1000 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TN2540-1000G-TR Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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