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TN2540-1000G

STMicroelectronics

TN2540-1000G by STMicroelectronics

TN2540-1000G by STMicroelectronics is a single SCR in a rectangular surface mount package, ideal for high-voltage applications. It supports up to 1000 V repetitive peak reverse voltage and 314 A non-repetitive peak on-state current. Operating b/w -40 °C to 125°C, it’s perfect for robust power control solutions.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,811 parts In-Stock

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Digiode

USA . 1,307 parts In-Stock

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1,307

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Anansix

USA . 773 parts In-Stock

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773

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,609 parts In-Stock

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$4.134

100+ parts

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$3.721

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1,609

$4.134

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$3.721

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MKK Technologies

India . 587 parts In-Stock

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$7.775

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$7.775

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DigiPath Technology Company

USA . 587 parts In-Stock

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$7.775

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587

$7.775

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Corphita

USA . 3,387 parts In-Stock

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Parana Technologies

USA . 1,024 parts In-Stock

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$4.943

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$4.943

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Overview

Unlock the potential of your designs with the TN2540-1000G from STMicroelectronics, a leading name in semiconductor innovation. This high-performance Silicon Controlled Rectifier (SCR) is engineered for reliability and efficiency, making it ideal for diverse applications such as power management, motor control, and lighting systems. Benefit from its robust current handling capabilities and compact package, ensuring seamless integration into your projects while enjoying the peace of mind that comes from a trusted manufacturer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material ensures durability and resistance to environmental influences, making the product reliable in various applications.

Maximum DC Gate Trigger Current: 40 mA

A maximum gate trigger current of 40 mA allows for easy triggering, making the component suitable for efficient control applications.

Configuration: SINGLE

The single configuration makes this SCR easy to integrate into circuits, simplifying the design process.

Non Repetitive Peak On-state Current: 314 A

The ability to handle a non-repetitive peak on-state current of 314 A indicates high robustness, suitable for high-power applications.

Surface Mount: YES

Being surface mount compatible enhances board space efficiency, allowing for compact circuit designs.

Package Shape: RECTANGULAR

The rectangular shape contributes to optimized layout and heat dissipation on printed circuit boards.

Terminal Form: GULL WING

Gull wing terminals promote easy soldering and reliable connections, increasing manufacturing efficiency.

Maximum On-state Current: 16 A

A maximum on-state current of 16 A ensures adequate load handling in typical SCR applications.

Maximum Leakage Current: 4 mA

Low maximum leakage current minimizes power loss and improves overall efficiency in circuit operation.

Repetitive Peak Reverse Voltage: 1000 V

A high reverse voltage rating of 1000 V allows for use in high voltage applications, increasing versatility.

No. of Terminals: 2

The two-terminal design simplifies connections and integration into various electronic circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package style is advantageous for space-constrained applications while maintaining good thermal characteristics.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125 °C, this SCR can function reliably in demanding environments.

Trigger Device Type: SCR

As an SCR, this device offers controlled rectification, ideal for applications needing precise power control.

Minimum Operating Temperature: -40 °C

The wide operating temperature range, starting at -40 °C, ensures functionality in extreme conditions.

Terminal Finish: MATTE TIN

Matte tin finish enhances solderability and reduces the risk of oxidation, ensuring long-lasting performance.

Terminal Position: SINGLE

Single terminal positioning aids in straightforward installation and minimizes complexity in circuit layouts.

Maximum RMS On-state Current: 25 A

The maximum RMS on-state current of 25 A provides flexibility for various load conditions, enhancing usability.

Maximum DC Gate Trigger Voltage: 1.3 V

A low gate trigger voltage of 1.3 V increases compatibility with low-voltage control circuits.

Case Connection: ANODE

The anode connection configuration supports flexible circuit designs and integration with other components.

Repetitive Peak Off-state Voltage: 1000 V

The ability to handle high off-state voltage enhances reliability under fault conditions.

Minimum Critical Rate of Rise of Off-state Voltage: 1000 V/us

A high critical rate of rise ensures the device can rapidly respond to voltage changes, enhancing switching performance.

Maximum Holding Current: 50 mA

The maximum holding current of 50 mA provides stable operation in diverse applications, ensuring safe and predictable rectification.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TN2540-1000G attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

1000 V/us

Maximum DC Gate Trigger Current:

40 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

50 mA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Maximum Leakage Current:

4 mA

Moisture Sensitivity Level (MSL):

1

Non Repetitive Peak On-state Current:

314 A

No. of Elements:

1

No. of Terminals:

2

Maximum On-state Current:

16 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

25 A

Repetitive Peak Off-state Voltage:

1000 V

Repetitive Peak Reverse Voltage:

1000 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TN2540-1000G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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