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TN2540-12G

STMicroelectronics

TN2540-12G by STMicroelectronics

TN2540-12G by STMicroelectronics is a single SCR in a rectangular plastic package, ideal for high-voltage applications. It supports a max repetitive peak reverse voltage of 1200 V and can handle up to 314 A non-repetitive peak on-state current. Operating b/w -40 °C to 125 °C, it’s perfect for power control in industrial systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,947 parts In-Stock

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6,947

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Digiode

USA . 3,205 parts In-Stock

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3,205

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Anansix

USA . 117 parts In-Stock

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117

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IDEA Electronic Components Group

UK . 316 parts In-Stock

1+ parts

$3.067

100+ parts

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$2.761

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316

$3.067

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$2.761

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MKK Technologies

India . 1,750 parts In-Stock

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$5.768

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1,750

$5.768

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DigiPath Technology Company

USA . 1,750 parts In-Stock

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$5.768

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1,750

$5.768

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Microchip USA

USA . 7,219 parts In-Stock

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$8.805

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7,219

$8.805

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AZTECH Wire

Italy . 405 parts In-Stock

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$9.490

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405

$9.490

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Corphita

USA . 3,110 parts In-Stock

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3,110

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Parana Technologies

USA . 655 parts In-Stock

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$3.667

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655

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$3.667

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Overview

Unlock unparalleled performance with the TN2540-12G from STMicroelectronics, a trusted leader in innovative semiconductor solutions. This Silicon Controlled Rectifier (SCR) is designed for exceptional reliability and efficiency, making it ideal for applications ranging from power control to motor drives. With its robust construction, featuring a compact surface mount design, customers benefit from enhanced thermal management and space-saving capabilities. Experience superior quality and unmatched value that elevate your projects to new heights!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable package material ensures reliability and protection against environmental factors.

Maximum DC Gate Trigger Current: 40 mA

Allows for lower power control circuits, making it energy efficient.

Configuration: SINGLE

Simplifies design and integration into various applications.

Non Repetitive Peak On-state Current: 314 A

High current capability allows the device to handle substantial load demands.

Surface Mount: YES

Facilitates easier and more efficient assembly in compact spaces.

Package Shape: RECTANGULAR

Optimizes space utilization on PCBs for more efficient layout.

Terminal Form: GULL WING

Provides secure connections and is suitable for automated soldering processes.

Maximum On-state Current: 1.2 A

Suitable for various low-to-medium current applications without overheating.

Repetitive Peak Reverse Voltage: 1200 V

High reverse voltage tolerance protects against voltage spikes in the system.

Maximum Repetitive Peak Off-state Leakage Current: 10 uA

Minimizes power loss during off states, ensuring better efficiency.

No. of Terminals: 2

Simple design with fewer connections simplifies circuit design.

Package Style (Meter): SMALL OUTLINE

Compact design ideal for space-constrained applications.

Maximum Operating Temperature: 125 °C

Can operate in high-temperature environments, ensuring reliability in harsh conditions.

Trigger Device Type: SCR

Offers reliable switching capabilities for controlling high power loads.

Minimum Operating Temperature: -40 °C

Designed to function in extremely low temperatures, enhancing versatility.

Terminal Position: SINGLE

Improves layout simplicity in circuit board designs.

Maximum RMS On-state Current: 25 A

Allows handling of substantial continuous current, making it ideal for demanding applications.

Maximum DC Gate Trigger Voltage: 1.3 V

Low gate trigger voltage minimizes energy consumption and heat generation.

Case Connection: ANODE

Supports straightforward integration into standard circuit designs.

Repetitive Peak Off-state Voltage: 1200 V

Enhances protection against over-voltage scenarios in various applications.

Minimum Critical Rate of Rise of Off-state Voltage: 1500 V/μs

Ensures fast response to switching conditions, improving performance in dynamic applications.

Maximum Holding Current: 80 mA

Allows for stable operation in low current applications, contributing to overall system efficiency.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TN2540-12G attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

1500 V/us

Maximum DC Gate Trigger Current:

40 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

80 mA

JESD-30 Code:

R-PSSO-G2

Non Repetitive Peak On-state Current:

314 A

No. of Elements:

1

No. of Terminals:

2

Maximum On-state Current:

1.2 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

25 A

Maximum Repetitive Peak Off-state Leakage Current:

10 uA

Repetitive Peak Off-state Voltage:

1200 V

Repetitive Peak Reverse Voltage:

1200 V

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

TN2540-12G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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