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TN2540-800G

STMicroelectronics

TN2540-800G by STMicroelectronics

TN2540-800G by STMicroelectronics is a single SCR in a rectangular plastic package, ideal for high-power applications. It supports a max on-state current of 25 A and can handle repetitive peak reverse voltages up to 800 V. With an operating temp range of -40 °C to 125°C, it's perfect for demanding environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,279 parts In-Stock

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4,279

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Anansix

USA . 2,523 parts In-Stock

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2,523

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Digiode

USA . 496 parts In-Stock

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496

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Pride Electronics

USA . 113 parts In-Stock

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113

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IDEA Electronic Components Group

UK . 2,117 parts In-Stock

1+ parts

$2.180

100+ parts

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$1.962

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2,117

$2.180

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$1.962

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MKK Technologies

India . 177 parts In-Stock

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$4.100

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177

$4.100

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DigiPath Technology Company

USA . 177 parts In-Stock

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$4.100

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177

$4.100

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Kepictronics

USA . 15,000 parts In-Stock

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15,000

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Corphita

USA . 2,510 parts In-Stock

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Parana Technologies

USA . 667 parts In-Stock

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$2.607

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$2.607

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Overview

Elevate your designs with the TN2540-800G from STMicroelectronics, a leading name in semiconductor innovation. This high-performance Silicon Controlled Rectifier offers superior reliability and efficiency for various applications, from power management to motor control. With its robust construction and exceptional thermal stability, it ensures optimal performance even in demanding environments. Trust STMicroelectronics to deliver unmatched quality, empowering you to create cutting-edge solutions that stand out in today’s market.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body enhances durability and allows for lightweight construction, making this SCR suitable for various applications.

Maximum DC Gate Trigger Current: 40 mA

A higher gate trigger current allows for reliable activation of the SCR, enabling effective control in power management tasks.

Configuration: SINGLE

The single configuration is ideal for straightforward, space-efficient designs without the complexity of multiple connections.

Non Repetitive Peak On-state Current: 314 A

This high non-repetitive peak on-state current rating ensures the SCR can handle sudden surges in current, making it suitable for demanding applications.

Surface Mount: YES

Surface mount capability allows for compact circuit designs and efficient use of PCB space, enhancing overall product design flexibility.

Package Shape: RECTANGULAR

Rectangular package shape promotes easier alignment and mounting on PCBs, contributing to streamlined manufacturing processes.

Terminal Form: GULL WING

Gull wing terminal form provides excellent mechanical support and soldering reliability, ensuring robust connections in applications.

Maximum On-state Current: 25 A

With a maximum on-state current of 25 A, this SCR can effectively handle medium power loads, making it a versatile choice for various applications.

Maximum Leakage Current: 0.005 mA

Low maximum leakage current minimizes energy loss and heat generation, optimizing performance in energy-sensitive applications.

Repetitive Peak Reverse Voltage: 800 V

A repetitive peak reverse voltage of 800 V makes this SCR suitable for high-voltage applications, ensuring reliability and safety.

Maximum Repetitive Peak Off-state Leakage Current: 5 µA

A very low peak off-state leakage current contributes to energy efficiency and ensures minimal power loss during operation.

No. of Terminals: 2

A simple 2-terminal design makes implementation easy and reduces the complexity of circuit designs.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for compact integration into electronic devices, enabling space-saving in modern applications.

Maximum Operating Temperature: 125 °C

A maximum operating temperature of 125 °C ensures reliable performance even in high-temperature environments, expanding application possibilities.

Trigger Device Type: SCR

As an SCR, this device offers excellent switching capabilities, ideal for controlled power applications.

Minimum Operating Temperature: -40 °C

A low minimum operating temperature of -40 °C allows for use in harsh, cold environments without compromising functionality.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and corrosion resistance, enhancing reliability in long-term usage.

Terminal Position: SINGLE

Single terminal position simplifies connection and layout, making it easier for integration into various circuit designs.

Maximum RMS On-state Current: 25 A

The ability to handle a maximum RMS current of 25 A helps ensure consistent performance under normal operating conditions.

Maximum DC Gate Trigger Voltage: 1.3 V

A low maximum gate trigger voltage means less energy is required for activation, which enhances energy efficiency.

Case Connection: ANODE

An anode case connection is standard for SCR devices, providing predictable behavior in circuit applications.

Repetitive Peak Off-state Voltage: 800 V

The ability to withstand high repetitive peak off-state voltage is crucial for ensuring operation in high-voltage environments.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/µs

A high critical rate of rise of off-state voltage enhances the SCR's capability to switch off quickly and efficiently.

Maximum Holding Current: 50 mA

A maximum holding current of 50 mA provides flexibility in gate control applications, ensuring reliable turn-off characteristics.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TN2540-800G attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

40 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

50 mA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Maximum Leakage Current:

.005 mA

Non Repetitive Peak On-state Current:

314 A

No. of Elements:

1

No. of Terminals:

2

Maximum On-state Current:

25 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

25 A

Maximum Repetitive Peak Off-state Leakage Current:

5 uA

Repetitive Peak Off-state Voltage:

800 V

Repetitive Peak Reverse Voltage:

800 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TN2540-800G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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