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T435-600H-TR

STMicroelectronics

T435-600H-TR by STMicroelectronics

STMicroelectronics T435-600H-TR is a TRIAC with 4A RMS on-state current, 1.3V max DC gate trigger voltage, and 600V repetitive peak off-state voltage. It operates b/w -40 °C to 125°C, ideal for AC power control applications requiring high reliability and performance in various temperature conditions.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,875 parts In-Stock

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3,875

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Anansix

USA . 879 parts In-Stock

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879

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Digiode

USA . 767 parts In-Stock

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767

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 34 parts In-Stock

1+ parts

$4.432

100+ parts

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1k+ parts

$3.988

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34

$4.432

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$3.988

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MKK Technologies

India . 340 parts In-Stock

1+ parts

$8.333

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340

$8.333

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DigiPath Technology Company

USA . 340 parts In-Stock

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$8.333

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340

$8.333

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Corphita

USA . 2,681 parts In-Stock

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2,681

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Parana Technologies

USA . 215 parts In-Stock

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$5.299

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215

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$5.299

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Overview

Upgrade your electronics with the T435-600H-TR by STMicroelectronics, a reliable and high-quality TRIAC component perfect for a wide range of applications. With a maximum repetitive peak off-state voltage of 600V and a maximum RMS on-state current of 4A, this component ensures optimal performance and efficiency. STMicroelectronics, known for its innovative technology and superior products, guarantees that this TRIAC will meet all your electronic needs. Don't miss out on the value and benefits this product offers - enhance your projects today with the T435-600H-TR!

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 35 mA

Having a high maximum DC gate trigger current ensures reliable and consistent triggering of the TRIAC, making the product suitable for a wide range of applications.

Maximum Leakage Current: 1 mA

Low maximum leakage current indicates minimal power loss when the TRIAC is in the off state, leading to higher efficiency and energy savings.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, the TRIAC can withstand tougher environmental conditions, increasing its durability and reliability in various industrial settings.

Trigger Device Type: TRIAC

Being a TRIAC, the product is capable of controlling AC power with high efficiency, making it a suitable choice for AC switching applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows the TRIAC to function reliably even in extremely cold environments, expanding its range of applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good conductivity and corrosion resistance, ensuring stable connections and long-term performance of the product.

Maximum RMS On-state Current: 4 A

The high maximum RMS on-state current capability enables the TRIAC to handle larger loads or currents, making it suitable for high-power applications.

Maximum DC Gate Trigger Voltage: 1.3 V

A low maximum DC gate trigger voltage means the TRIAC can be easily triggered with low voltage signals, improving its compatibility with various control systems.

Repetitive Peak Off-state Voltage: 600 V

The high repetitive peak off-state voltage rating ensures that the TRIAC can safely block high voltages when in the off state, enhancing its reliability in AC switching applications.

Minimum Critical Rate of Rise of Off-state Voltage: 400 V/us

A high minimum critical rate of rise of off-state voltage ensures fast response of the TRIAC in blocking voltages, making it suitable for rapid switching applications.

Maximum Holding Current: 35 mA

With a high maximum holding current, the TRIAC can maintain its on state reliably, preventing accidental turn-off due to fluctuations in current, which is crucial for continuous operation.

Technical Specifications

Triode For Alternating Current (TRIAC) T435-600H-TR attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

400 V/us

Maximum DC Gate Trigger Current:

35 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

35 mA

JESD-609 Code:

e3

Maximum Leakage Current:

1 mA

Moisture Sensitivity Level (MSL):

1

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

4 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Trigger Device Type:

Trade Compliance

T435-600H-TR Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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