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T435-700B

STMicroelectronics

T435-700B by STMicroelectronics

T435-700B by STMicroelectronics is a snubberless TRIAC designed for efficient AC control. It features a max RMS on-state current of 4A, repetitive peak off-state voltage of 700V, and operates b/w -40 °C to 110°C. Ideal for compact surface mount applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,360 parts In-Stock

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4,360

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Digiode

USA . 3,226 parts In-Stock

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Anansix

USA . 774 parts In-Stock

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LittleDiode

UK . 4 parts In-Stock

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IDEA Electronic Components Group

UK . 364 parts In-Stock

1+ parts

$3.651

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$3.286

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364

$3.651

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$3.286

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MKK Technologies

India . 133 parts In-Stock

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$6.865

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DigiPath Technology Company

USA . 133 parts In-Stock

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$6.865

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Kepictronics

USA . 15,000 parts In-Stock

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RC Electronics

USA . 7,110 parts In-Stock

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Corphita

USA . 3,730 parts In-Stock

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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Parana Technologies

USA . 1,091 parts In-Stock

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$4.365

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Overview

Unlock the potential of your electrical designs with the T435-700B from STMicroelectronics, a leader in innovation and quality. This snubberless TRIAC seamlessly manages AC loads, ensuring reliable performance across diverse applications—from lighting control to motor drives. With its compact design and robust thermal capabilities, you gain efficiency without compromise. Choose STMicroelectronics for unparalleled reliability and elevate your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures good insulation properties and protection against environmental factors, making it suitable for a variety of applications.

Maximum DC Gate Trigger Current: 35 mA

A maximum gate trigger current of 35 mA allows for efficient operation without requiring excessive current, making it an energy-efficient option.

Configuration: SINGLE

The single configuration helps simplify circuit design and reduces the space required on a PCB, which is ideal for compact applications.

Surface Mount: YES

Surface mount capability facilitates easy assembly on automated production lines, enhancing manufacturing efficiency.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space utilization on the PCB, allowing for a tighter layout and better performance.

Terminal Form: GULL WING

Gull wing terminals provide excellent mechanical stability and solderability, ensuring reliable connections in the circuit.

Maximum Leakage Current: 0.01 mA

A low maximum leakage current of 0.01 mA minimizes energy loss in off-state conditions, improving overall efficiency and reliability.

No. of Terminals: 2

With only 2 terminals, this TRIAC simplifies circuit connections and reduces complexity in design and assembly.

Package Style (Meter): SMALL OUTLINE

The small outline package style is designed for high-density applications, making it suitable for space-constrained environments.

Maximum Operating Temperature: 110 °C

A maximum operating temperature of 110 °C indicates good thermal stability, allowing it to function effectively in higher temperature environments.

Trigger Device Type: SNUBBERLESS TRIAC

As a snubberless TRIAC, this device reduces the need for additional snubber circuits, simplifying design and reducing costs.

Minimum Operating Temperature: -40 °C

The ability to operate down to -40 °C makes this TRIAC suitable for use in extreme cold environments, widening its application range.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin terminal finish provides good solderability and corrosion resistance, ensuring reliable long-term connections.

Terminal Position: SINGLE

A single terminal position simplifies circuit design and enhances reliability by reducing the number of potential points of failure.

Maximum RMS On-state Current: 4 A

A maximum RMS on-state current of 4 A makes this TRIAC suitable for a variety of load current applications, allowing for versatile use.

Maximum DC Gate Trigger Voltage: 1.5 V

With a maximum DC gate trigger voltage of 1.5 V, it effectively responds to lower signal levels, enhancing compatibility with various triggering methods.

Case Connection: MAIN TERMINAL 2

The main terminal connection ensures reliable performance in AC applications by providing direct connectivity to the load.

Repetitive Peak Off-state Voltage: 700 V

A high repetitive peak off-state voltage of 700 V allows this TRIAC to handle substantial voltage spikes, improving durability and reliability.

Minimum Critical Rate of Rise of Off-state Voltage: 250 V/us

A minimum critical rate of rise of off-state voltage of 250 V/us enhances its ability to switch off efficiently, reducing the risk of unintended triggering.

Maximum Holding Current: 35 mA

A low maximum holding current of 35 mA is beneficial in applications where power conservation is essential, ensuring low energy consumption.

Maximum Time At Peak Reflow Temperature: 30 s

With a maximum time at peak reflow temperature of 30 seconds, this TRIAC is compatible with standard soldering processes, facilitating easier manufacturing.

Peak Reflow Temperature: 260 °C

The ability to withstand a peak reflow temperature of 260 °C ensures this TRIAC can endure the soldering processes commonly used in electronics assembly.

Technical Specifications

Triode For Alternating Current (TRIAC) T435-700B attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

250 V/us

Maximum DC Gate Trigger Current:

35 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

35 mA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Maximum Leakage Current:

.01 mA

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum RMS On-state Current:

4 A

Repetitive Peak Off-state Voltage:

700 V

Sub-Category:

TRIACs

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

Trade Compliance

T435-700B Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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