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T410-600H-TR

STMicroelectronics

T410-600H-TR by STMicroelectronics

STMicroelectronics' T410-600H-TR is a TRIAC with 600V repetitive peak off-state voltage, 4A max RMS on-state current, and -40 to 125 °C operating temperature range. Ideal for AC power control applications requiring a trigger device with 10mA max DC gate trigger current.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,578 parts In-Stock

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Anansix

USA . 2,419 parts In-Stock

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Digiode

USA . 574 parts In-Stock

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574

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,451 parts In-Stock

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$4.524

100+ parts

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$4.071

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$4.524

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$4.071

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MKK Technologies

India . 966 parts In-Stock

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$8.506

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966

$8.506

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DigiPath Technology Company

USA . 966 parts In-Stock

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$8.506

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966

$8.506

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Corphita

USA . 4,075 parts In-Stock

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4,075

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Parana Technologies

USA . 1,284 parts In-Stock

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$5.409

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1,284

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$5.409

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Overview

Elevate your electrical designs with the T410-600H-TR by STMicroelectronics - a high-quality TRIAC that offers unparalleled performance and reliability. With a maximum RMS on-state current of 4A and a repetitive peak off-state voltage of 600V, this trigger device is perfect for a wide range of applications. From dimmer switches to motor control, the T410-600H-TR provides exceptional value, efficiency, and versatility. Trust in STMicroelectronics' reputation for excellence and choose the T410-600H-TR for all your electrical needs.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 10 mA

This high current capacity allows for reliable and consistent triggering of the TRIAC, ensuring smooth operation.

Maximum Leakage Current: 1 mA

Low leakage current helps in reducing power wastage and improving overall efficiency of the device.

Maximum Operating Temperature: 125 °C

With a high operating temperature range, this TRIAC can perform well in a variety of environments without overheating.

Trigger Device Type: TRIAC

As the designated trigger device for Alternating Current, this TRIAC is specifically designed for AC applications, ensuring compatibility and optimal performance.

Terminal Finish: MATTE TIN

The matte tin finish provides corrosion resistance and good conductivity, enhancing the durability and longevity of the product.

Maximum RMS On-state Current: 4 A

With a high maximum current rating, this TRIAC can handle heavy loads effectively, making it suitable for a wide range of applications.

Maximum DC Gate Trigger Voltage: 1.3 V

Low trigger voltage ensures efficient triggering of the device with minimal power consumption, contributing to energy efficiency.

Repetitive Peak Off-state Voltage: 600 V

The high off-state voltage rating allows for safe operation in high-voltage applications, making this TRIAC a versatile choice.

Minimum Critical Rate of Rise of Off-state Voltage: 40 V/us

Fast rate of rise capability helps in protecting the device against voltage spikes and transient events, ensuring reliable and stable performance.

Maximum Holding Current: 15 mA

High holding current ensures the TRIAC remains in the on-state even in the presence of external factors, providing reliability and stability in operation.

Technical Specifications

Triode For Alternating Current (TRIAC) T410-600H-TR attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

40 V/us

Maximum DC Gate Trigger Current:

10 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

15 mA

JESD-609 Code:

e3

Maximum Leakage Current:

1 mA

Moisture Sensitivity Level (MSL):

1

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

4 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Trigger Device Type:

Trade Compliance

T410-600H-TR Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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