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T410-700B-TR

STMicroelectronics

T410-700B-TR by STMicroelectronics

T410-700B-TR by STMicroelectronics is a single TRIAC designed for AC applications, featuring a max RMS on-state current of 4 A and a repetitive peak off-state voltage of 700 V. It operates efficiently in temperatures from -40 °C to 125°C. Ideal for controlling loads in lighting and motor applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,599 parts In-Stock

1+ parts

-

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2,599

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Anansix

USA . 2,332 parts In-Stock

1+ parts

-

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2,332

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Vyrian

USA . 1,378 parts In-Stock

1+ parts

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1,378

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 870 parts In-Stock

1+ parts

$2.387

100+ parts

-

1k+ parts

$2.149

10k+ parts

-

870

$2.387

-

$2.149

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MKK Technologies

India . 849 parts In-Stock

1+ parts

$4.489

100+ parts

-

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849

$4.489

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DigiPath Technology Company

USA . 849 parts In-Stock

1+ parts

$4.489

100+ parts

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849

$4.489

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Kepictronics

USA . 27,860 parts In-Stock

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27,860

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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8,000

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Corphita

USA . 1,236 parts In-Stock

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1,236

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Parana Technologies

USA . 367 parts In-Stock

1+ parts

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100+ parts

$2.854

1k+ parts

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367

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$2.854

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Overview

Unlock the potential of your designs with the T410-700B-TR by STMicroelectronics, a premier TRIAC solution crafted for reliability and performance. Renowned for excellence, STMicroelectronics ensures this component delivers exceptional quality while seamlessly handling AC loads in diverse applications—from lighting control to motor regulation. Experience enhanced efficiency and robust operation, making it ideal for your next project. Elevate your innovation with a trusted partner!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy ensures robustness and protection against environmental factors, making this TRIAC suitable for a wide range of applications.

Maximum DC Gate Trigger Current: 10 mA

With a low gate trigger current requirement, this TRIAC is efficient and compatible with low-power control circuits.

Configuration: SINGLE

The single configuration simplifies circuit design, making it easier to integrate into various applications.

Surface Mount: YES

Surface mount packaging allows for space-saving designs and automated assembly processes, enhancing manufacturing efficiency.

Package Shape: RECTANGULAR

The rectangular shape is optimized for PCB layout, providing flexibility in design and making it easier to fit within compact spaces.

Terminal Form: GULL WING

The gull wing terminal form ensures secure mechanical connections and reliable electrical performance, which is critical in high-frequency applications.

Maximum Leakage Current: 0.005 mA

A low maximum leakage current minimizes power loss and improves energy efficiency, contributing to overall system performance.

No. of Terminals: 2

The dual terminal setup simplifies control and switching operations, making this TRIAC easy to integrate into electronic circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package saves board space and accommodates high-density designs suitable for modern electronics.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature enhances reliability and allows usage in demanding environments.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

The 4 quadrant capability enables versatile control of AC loads in both directions, broadening the application range.

Minimum Operating Temperature: -40 °C

A wide operating temperature range ensures reliability in extreme conditions, making this TRIAC ideal for outdoor and industrial applications.

Terminal Finish: MATTE TIN

The matte tin finish improves solderability and reduces oxidation, ensuring long-term performance and reliability.

Terminal Position: SINGLE

A single terminal position enhances connectivity and simplifies circuit design.

Maximum RMS On-state Current: 4 A

The ability to handle 4 A RMS current allows this TRIAC to drive various loads effectively, making it suitable for diverse applications.

Maximum DC Gate Trigger Voltage: 1.3 V

A low gate trigger voltage enhances safety and compatibility with low-voltage control circuits.

Case Connection: MAIN TERMINAL 2

The main terminal connection simplifies the wiring and ensures effective power handling.

Repetitive Peak Off-state Voltage: 700 V

With a high off-state voltage capability, this TRIAC can handle significant voltage levels, ensuring reliable operation in high-voltage applications.

Minimum Critical Rate of Rise of Off-state Voltage: 40 V/us

A high critical rate of rise improves performance under fast switching conditions, enhancing the device’s efficiency in fast signal applications.

Maximum Holding Current: 15 mA

A higher holding current allows for improved stability in the on-state, making it reliable for sustained operation.

Technical Specifications

Triode For Alternating Current (TRIAC) T410-700B-TR attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

40 V/us

Maximum DC Gate Trigger Current:

10 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

15 mA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Maximum Leakage Current:

.005 mA

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

4 A

Repetitive Peak Off-state Voltage:

700 V

Sub-Category:

TRIACs

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

Trigger Device Type:

Trade Compliance

T410-700B-TR Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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