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T1620T-6I

STMicroelectronics

T1620T-6I by STMicroelectronics

T1620T-6I by STMicroelectronics is a snubberless TRIAC designed for AC control applications. It features a max RMS on-state current of 16 A, operates b/w -40 °C to 125 °C, and has a gate trigger current of 20 mA. Ideal for efficient power management in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,679 parts In-Stock

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7,679

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Digiode

USA . 1,123 parts In-Stock

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1,123

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Anansix

USA . 84 parts In-Stock

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84

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,388 parts In-Stock

1+ parts

$3.959

100+ parts

-

1k+ parts

$3.563

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1,388

$3.959

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$3.563

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Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$5.209

100+ parts

$4.740

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$4.271

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350

$5.209

$4.740

$4.271

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MKK Technologies

India . 259 parts In-Stock

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$7.444

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259

$7.444

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DigiPath Technology Company

USA . 259 parts In-Stock

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$7.444

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259

$7.444

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AZTECH Wire

Italy . 1,065 parts In-Stock

1+ parts

$18.420

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1,065

$18.420

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A-Z Elektronik GmbH

Germany . 5,556 parts In-Stock

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5,556

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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3,500

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RC Electronics

USA . 2,878 parts In-Stock

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2,878

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Corphita

USA . 1,800 parts In-Stock

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1,800

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Parana Technologies

USA . 1,378 parts In-Stock

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$4.733

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1,378

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$4.733

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Perfect Parts

USA . 1,070 parts In-Stock

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1,070

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Overview

Unlock the potential of your designs with the T1620T-6I from STMicroelectronics, a leader in semiconductor innovation. This robust TRIAC excels in performance with snubberless technology, ensuring reliability in diverse applications—from motor control to lighting systems. Experience superior quality and efficiency, backed by ST’s commitment to excellence. Elevate your projects with a component that delivers exceptional value, enhancing both functionality and longevity.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material enhances durability and provides good insulation properties, making this TRIAC suitable for various applications.

Maximum DC Gate Trigger Current: 20 mA

A maximum trigger current of 20 mA allows for efficient control while minimizing power loss, which improves overall circuit efficiency.

Configuration: SINGLE

The single configuration simplifies integration into circuits, making layout design and assembly easier for engineers.

Package Shape: RECTANGULAR

The rectangular package shape allows for space-efficient placement on PCBs, maximizing design flexibility.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical bonding and reliable connections, ensuring stable performance in various environments.

Maximum Leakage Current: 0.005 mA

Low leakage current ensures minimal power loss during operation, which contributes to energy efficiency and reliability in applications.

Number of Terminals: 3

With three terminals, this TRIAC offers versatility for different circuit configurations, enabling a wider range of applications.

Package Style (Meter): FLANGE MOUNT

The flange mount style ensures secure mounting and enhanced thermal management, which is ideal for high-dissipation environments.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature allows this TRIAC to function reliably in demanding thermal conditions.

Trigger Device Type: SNUBBERLESS TRIAC

Being a snubberless TRIAC, this product minimizes the need for additional external components, simplifying circuit design and reducing costs.

Minimum Operating Temperature: -40 °C

The capability to operate at low temperatures ensures reliable performance in harsh environmental conditions.

Terminal Finish: MATTE TIN

The matte tin finish provides good solderability and corrosion resistance, enhancing the longevity of electrical connections.

Terminal Position: SINGLE

Single terminal position allows for straightforward and clear circuit connections, simplifying the manufacturing process.

Maximum RMS On-state Current: 16 A

A high on-state current rating enables this TRIAC to handle substantial loads, making it suitable for high-power applications.

Maximum DC Gate Trigger Voltage: 1.3 V

A low trigger voltage minimizes the required gate drive requirements, leading to lower power consumption and heat generation.

Case Connection: ISOLATED

The isolated case connection enhances safety by preventing electrical shorts, making it suitable for sensitive applications.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/µs

A high rate of rise for off-state voltage enhances the TRIAC's ability to switch off quickly, reducing switching losses in high-frequency applications.

Maximum Holding Current: 25 mA

The low holding current allows for efficient operation in low-power applications, ensuring that the TRIAC remains in the off-state until triggered.

Technical Specifications

Triode For Alternating Current (TRIAC) T1620T-6I attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

20 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

25 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

.005 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

16 A

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

T1620T-6I Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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