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T1250-800G

STMicroelectronics

T1250-800G by STMicroelectronics

STMicroelectronics T1250-800G is a TRIAC with 12A RMS current, 800V repetitive peak off-state voltage, and 50mA holding current. Ideal for AC power control applications due to its high DC gate trigger current of 50A and wide operating temperature range from -40 °C to 125°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,972 parts In-Stock

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Digiode

USA . 2,542 parts In-Stock

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2,542

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Anansix

USA . 2,454 parts In-Stock

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2,454

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,338 parts In-Stock

1+ parts

$1.854

100+ parts

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$1.668

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1,338

$1.854

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$1.668

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MKK Technologies

India . 917 parts In-Stock

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$3.486

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917

$3.486

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DigiPath Technology Company

USA . 917 parts In-Stock

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$3.486

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917

$3.486

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Corphita

USA . 4,381 parts In-Stock

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Parana Technologies

USA . 1,569 parts In-Stock

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$2.216

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1,569

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$2.216

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Overview

Experience the next level of performance with the T1250-800G by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers top-quality products like this Triode For Alternating Current (TRIAC) that are designed to exceed expectations. Whether you're looking for reliable power control solutions or seeking to enhance your electronic designs, the T1250-800G offers unmatched value and benefits. With a wide range of applications and superior features, this product is sure to meet and exceed your needs. Elevate your projects with STMicroelectronics today.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 50000 mA

The high gate trigger current allows for reliable and consistent switching, making this TRIAC suitable for high-power applications.

Surface Mount: YES

Surface mount design allows for easy and convenient installation on PCBs, saving space and reducing assembly time.

Maximum Leakage Current: 0.005 mA

Low leakage current ensures minimal power loss when the device is in the off-state, leading to improved efficiency.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures the TRIAC can withstand elevated temperatures, making it suitable for a wide range of environments.

Trigger Device Type: TRIAC

Being a TRIAC allows for bidirectional control of current flow, making it versatile for AC power control applications.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures the TRIAC can function reliably even in cold environments.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance, ensuring a strong and durable connection.

Maximum RMS On-state Current: 12 A

High on-state current rating allows for the handling of high currents without overheating, making it suitable for high-power applications.

Maximum DC Gate Trigger Voltage: 1.3 V

Low gate trigger voltage ensures efficient and precise triggering of the device, leading to reliable operation.

Repetitive Peak Off-state Voltage: 800 V

High off-state voltage rating allows for reliable isolation and control of high voltage circuits, making it suitable for industrial applications.

Minimum Critical Rate of Rise of Off-state Voltage: 1000 V/us

Fast rate of rise of off-state voltage ensures quick response to changing voltage conditions, enhancing reliability and safety.

Maximum Holding Current: 50 mA

High holding current ensures the TRIAC remains in the on-state until intentionally switched off, providing stable operation in various applications.

Technical Specifications

Triode For Alternating Current (TRIAC) T1250-800G attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

1000 V/us

Maximum DC Gate Trigger Current:

50000 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

50 mA

JESD-609 Code:

e3

Maximum Leakage Current:

.005 mA

Moisture Sensitivity Level (MSL):

1

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

TRIACs

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Trigger Device Type:

Trade Compliance

T1250-800G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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