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T1250-600G

STMicroelectronics

T1250-600G by STMicroelectronics

T1250-600G by STMicroelectronics is a snubberless TRIAC designed for efficient AC control. It features a max RMS on-state current of 12 A, repetitive peak off-state voltage of 600 V, and operates b/w -40 °C to 125 °C. Ideal for power switching applications in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,185 parts In-Stock

1+ parts

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4,185

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Digiode

USA . 2,339 parts In-Stock

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2,339

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Anansix

USA . 1,638 parts In-Stock

1+ parts

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1,638

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ComSIT Distribution GmbH

Germany . 1,500 parts In-Stock

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1,500

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 948 parts In-Stock

1+ parts

$3.162

100+ parts

-

1k+ parts

$2.846

10k+ parts

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948

$3.162

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$2.846

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MKK Technologies

India . 729 parts In-Stock

1+ parts

$5.946

100+ parts

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729

$5.946

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DigiPath Technology Company

USA . 729 parts In-Stock

1+ parts

$5.946

100+ parts

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729

$5.946

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Corphita

USA . 4,351 parts In-Stock

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4,351

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Parana Technologies

USA . 100 parts In-Stock

1+ parts

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100+ parts

$3.781

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100

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$3.781

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Overview

Unlock unparalleled performance with the T1250-600G TRIAC by STMicroelectronics, a leader in semiconductor innovation. Designed for reliability and efficiency, this compact component excels in various applications, from motor control to lighting systems. With exceptional gate trigger capabilities and minimal leakage current, it ensures robust operation even in challenging environments. Choose the T1250-600G for unmatched quality and enduring value—empowering your designs to thrive!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package material ensures durability and resistance to environmental factors, making it suitable for various applications.

Maximum DC Gate Trigger Current: 50000 mA

A high maximum gate trigger current enables effective control and rapid switching, enhancing the overall efficiency of the device.

Configuration: SINGLE

Single configuration allows for simpler designs and reduces circuit complexity, making it easier to integrate into existing systems.

Surface Mount: YES

Surface mount capability facilitates compact designs and automated assembly processes, providing flexibility for modern electronic applications.

Package Shape: RECTANGULAR

The rectangular package shape helps in optimizing board space, promoting efficient layout and enhancing thermal performance.

Terminal Form: GULL WING

Gull wing terminals provide excellent soldering surface and reliability, improving the mechanical strength of the connections.

Maximum Leakage Current: 0.005 mA

Low leakage current ensures minimal power loss during operation, contributing to improved energy efficiency and reliability.

No. of Terminals: 2

The simplicity of having two terminals simplifies connections, making it user-friendly for various electronic applications.

Package Style (Meter): SMALL OUTLINE

Small outline package style aids in space-saving designs, allowing for more compact circuit layouts, essential for portable devices.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature ensures reliable performance under extreme conditions, making it suitable for demanding environments.

Trigger Device Type: SNUBBERLESS TRIAC

Being a snubberless TRIAC provides better performance in noise-sensitive applications, reducing the need for additional components.

Minimum Operating Temperature: -40 °C

The ability to operate in low temperatures expands the range of applications, especially in colder environments.

Terminal Position: SINGLE

Single terminal position simplifies design requirements and reduces layout complexity for easier integration.

Maximum RMS On-state Current: 12 A

A high on-state current capacity allows for robust performance in power applications, enhancing the overall reliability of the circuit.

Maximum DC Gate Trigger Voltage: 1.3 V

Low gate trigger voltage enables compatibility with low-voltage control systems, adding to the versatility of the device.

Case Connection: MAIN TERMINAL 2

Main terminal 2 case connection provides a simple and effective connection method for efficient operation.

Repetitive Peak Off-state Voltage: 600 V

A high repetitive peak off-state voltage makes this TRIAC suitable for high-voltage applications, ensuring reliability in harsh conditions.

Minimum Critical Rate of Rise of Off-state Voltage: 1000 V/us

The ability to handle rapid changes in voltage enhances the performance in dynamic applications, reducing the risk of failure.

Maximum Holding Current: 50 mA

A low maximum holding current allows for efficient operation in low-power applications, ensuring the TRIAC remains responsive to control signals.

Technical Specifications

Triode For Alternating Current (TRIAC) T1250-600G attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

1000 V/us

Maximum DC Gate Trigger Current:

50000 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

50 mA

JESD-30 Code:

R-PSSO-G2

Maximum Leakage Current:

.005 mA

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

Trade Compliance

T1250-600G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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