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S4016MH

STMicroelectronics

S4016MH by STMicroelectronics

S4016MH by STMicroelectronics is a single SCR in a rectangular plastic/epoxy package, ideal for high-power applications. It supports a max on-state current of 25 A and non-repetitive peak on-state current of 415 A, withstanding up to 600 V. Operating b/w -45 °C and 125°C, it’s perfect for robust electronic designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,848 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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4,848

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Digiode

USA . 3,535 parts In-Stock

1+ parts

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100+ parts

-

1k+ parts

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10k+ parts

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3,535

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Anansix

USA . 1,430 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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1,430

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 452 parts In-Stock

1+ parts

$2.199

100+ parts

-

1k+ parts

$1.979

10k+ parts

-

452

$2.199

-

$1.979

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MKK Technologies

India . 669 parts In-Stock

1+ parts

$4.135

100+ parts

-

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10k+ parts

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669

$4.135

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DigiPath Technology Company

USA . 669 parts In-Stock

1+ parts

$4.135

100+ parts

-

1k+ parts

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10k+ parts

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669

$4.135

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Corphita

USA . 4,210 parts In-Stock

1+ parts

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4,210

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Parana Technologies

USA . 1,754 parts In-Stock

1+ parts

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100+ parts

$2.629

1k+ parts

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10k+ parts

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1,754

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$2.629

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Overview

Experience unparalleled reliability and performance with the S4016MH from STMicroelectronics, a leader in cutting-edge semiconductor solutions. This Silicon Controlled Rectifier (SCR) excels in demanding applications, ensuring efficient power management with exceptional durability. Designed for versatility, it delivers robust current handling and minimal leakage, perfect for industrial controls and energy systems. Elevate your projects with a product that combines quality engineering and trusted support, maximizing value and innovation in every application.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material ensures durability and reliability, making the SCR suitable for various environmental conditions.

Maximum DC Gate Trigger Current: 50 mA

A relatively low gate trigger current makes this SCR energy-efficient while ensuring reliable operation.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces the complexity of integrations.

Non Repetitive Peak On-state Current: 415 A

A high non-repetitive peak on-state current rating allows the SCR to handle significant load fluctuations without damage.

Package Shape: RECTANGULAR

The rectangular package shape is space-efficient and facilitates easy mounting in various applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical bonds and superior stability within circuit assemblies.

Maximum On-state Current: 25 A

This high maximum on-state current rating is ideal for industrial applications requiring robust control of power loads.

Maximum Leakage Current: 0.01 mA

A low leakage current ensures minimal power loss and enhances overall efficiency of the circuit.

Repetitive Peak Reverse Voltage: 600 V

This high voltage rating makes the SCR suitable for high-voltage applications and provides significant safety margins.

No. of Terminals: 3

Three terminals allow for simple connections in typical SCR configurations, promoting ease of use in circuit designs.

Package Style (Meter): FLANGE MOUNT

Flange mount style allows for secure installation and easy attachment to heatsinks, enhancing thermal management.

Maximum Operating Temperature: 125 °C

A wide maximum operating temperature allows this SCR to function reliably in high-temperature environments.

Trigger Device Type: SCR

Being an SCR type allows for high-power switching applications, making it versatile for various uses.

Minimum Operating Temperature: -45 °C

The low minimum operating temperature rating ensures reliable performance in extreme cold conditions.

Terminal Finish: MATTE TIN

Matte tin finishing provides good solderability and corrosion resistance, ensuring long-lasting connections.

Terminal Position: SINGLE

Single terminal position simplifies PCB layout and optimizes space within the device design.

Maximum RMS On-state Current: 40 A

A high maximum RMS on-state current supports applications with higher consistent loads, enhancing its functional range.

Maximum DC Gate Trigger Voltage: 1.5 V

The low gate trigger voltage helps in reducing energy consumption and allows interfacing with low voltage control systems.

Repetitive Peak Off-state Voltage: 600 V

This capability allows the SCR to effectively block voltage spikes, protecting the circuit during operation.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/µs

A high critical rate of rise rating ensures that the SCR can handle abrupt voltage changes without failure.

Maximum Holding Current: 100 mA

A relatively high holding current allows for stable operation in circuits where maintaining current is crucial.

Technical Specifications

Silicon Controlled Rectifiers (SCR) S4016MH attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

100 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

.01 mA

Non Repetitive Peak On-state Current:

415 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

25 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-45 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

40 A

Repetitive Peak Off-state Voltage:

600 V

Repetitive Peak Reverse Voltage:

600 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

S4016MH Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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