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S4014DH

STMicroelectronics

S4014DH by STMicroelectronics

S4014DH by STMicroelectronics is a single SCR in a rectangular plastic/epoxy package, ideal for high-power applications. It supports a max on-state current of 40 A and non-repetitive peak on-state current of 415 A, with a reverse voltage rating of 400 V. Operating b/w -45 °C to 125°C, it’s perfect for robust electronic designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,411 parts In-Stock

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2,411

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Anansix

USA . 1,668 parts In-Stock

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1,668

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Digiode

USA . 516 parts In-Stock

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516

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 47 parts In-Stock

1+ parts

$4.277

100+ parts

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1k+ parts

$3.849

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47

$4.277

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$3.849

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MKK Technologies

India . 929 parts In-Stock

1+ parts

$8.043

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929

$8.043

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DigiPath Technology Company

USA . 929 parts In-Stock

1+ parts

$8.043

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929

$8.043

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Parana Technologies

USA . 2,080 parts In-Stock

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$5.114

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2,080

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$5.114

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Corphita

USA . 1,229 parts In-Stock

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1,229

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Overview

Elevate your designs with the S4014DH from STMicroelectronics, a premier choice in Silicon Controlled Rectifiers. Renowned for exceptional quality and reliability, STMicroelectronics delivers unmatched performance across diverse applications, from motor control to power management. Benefit from superior current handling and robust thermal stability, ensuring your projects thrive under demanding conditions. With the S4014DH, enhance efficiency while enjoying peace of mind, knowing you’re backed by a trusted industry leader.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material offers excellent insulation properties and durability, making this SCR suitable for a wide range of applications.

Maximum DC Gate Trigger Current: 75 mA

A maximum gate trigger current of 75 mA allows for efficient triggering of the SCR, ensuring reliable operation in high-performance applications.

Configuration: SINGLE

The single configuration simplifies integration into circuit designs, making it easier to implement in various electrical systems.

Non Repetitive Peak On-state Current: 415 A

The ability to handle non-repetitive peak currents up to 415 A makes this SCR capable of managing high current demands during transient conditions.

Package Shape: RECTANGULAR

The rectangular package shape allows efficient use of space on PCB layouts while ensuring good thermal performance.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical and electrical connections, enhancing reliability in various applications.

Maximum On-state Current: 40 A

With a maximum on-state current rating of 40 A, this SCR can effectively handle significant loads in power control applications.

Maximum Leakage Current: 3 mA

A low maximum leakage current of 3 mA minimizes power losses, making it energy-efficient in designs.

Repetitive Peak Reverse Voltage: 400 V

The high repetitive peak reverse voltage of 400 V ensures reliability in high-voltage applications, protecting against voltage spikes.

No. of Terminals: 3

Having 3 terminals allows for versatile connection configurations, making it adaptable to different circuit designs.

Package Style (Meter): FLANGE MOUNT

The flange mount package style simplifies installation and enhances stability in various mounting environments.

Maximum Operating Temperature: 125 °C

Operating at up to 125 °C ensures reliability in high-temperature conditions, suitable for harsh environments.

Trigger Device Type: SCR

As a Silicon Controlled Rectifier (SCR), this device provides excellent control over AC loads, making it ideal for power management.

Minimum Operating Temperature: -45 °C

The capability to operate down to -45 °C makes this SCR highly versatile for use in extreme temperature environments.

Terminal Finish: MATTE TIN

The matte tin terminal finish enhances solderability and prevents oxidation, ensuring a reliable electrical connection.

Terminal Position: SINGLE

A single terminal position simplifies design and layout considerations in circuit board manufacturing.

Maximum RMS On-state Current: 40 A

The maximum RMS on-state current rating matches the DC capabilities, providing flexibility in AC and DC applications.

Maximum DC Gate Trigger Voltage: 2.5 V

A low maximum gate trigger voltage of 2.5 V facilitates easy integration with low-voltage control circuits.

Repetitive Peak Off-state Voltage: 400 V

This SCR can handle off-state voltages up to 400 V, making it suitable for high-voltage switch applications.

Minimum Critical Rate of Rise of Off-state Voltage: 750 V/us

A high critical voltage rise rate indicates the SCR's robustness and ability to withstand rapid voltage changes, enhancing its reliability.

Maximum Holding Current: 115 mA

The maximum holding current of 115 mA ensures the SCR can maintain its conduction state even at lower current levels, providing stability in operation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) S4014DH attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

750 V/us

Maximum DC Gate Trigger Current:

75 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

115 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

3 mA

Non Repetitive Peak On-state Current:

415 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

40 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-45 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

40 A

Repetitive Peak Off-state Voltage:

400 V

Repetitive Peak Reverse Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

S4014DH Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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