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S4016DH

STMicroelectronics

S4016DH by STMicroelectronics

S4016DH by STMicroelectronics is a single SCR in a rectangular plastic/epoxy package, ideal for high-power applications. It supports a max on-state current of 25 A and non-repetitive peak on-state current of 415 A, withstanding up to 400 V. Operating b/w -45 °C to 125°C, it’s perfect for robust electronic designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 1,897 parts In-Stock

1+ parts

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1,897

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Vyrian

USA . 1,754 parts In-Stock

1+ parts

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1k+ parts

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1,754

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Digiode

USA . 1,651 parts In-Stock

1+ parts

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10k+ parts

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1,651

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 422 parts In-Stock

1+ parts

$4.238

100+ parts

-

1k+ parts

$3.814

10k+ parts

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422

$4.238

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$3.814

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MKK Technologies

India . 1,285 parts In-Stock

1+ parts

$7.968

100+ parts

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10k+ parts

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1,285

$7.968

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DigiPath Technology Company

USA . 1,285 parts In-Stock

1+ parts

$7.968

100+ parts

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10k+ parts

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1,285

$7.968

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Corphita

USA . 2,306 parts In-Stock

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2,306

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Parana Technologies

USA . 2,107 parts In-Stock

1+ parts

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100+ parts

$5.067

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2,107

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$5.067

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Overview

Unlock unparalleled performance and reliability with the S4016DH from STMicroelectronics, a leader in semiconductor innovation. This powerful Silicon Controlled Rectifier (SCR) excels in demanding applications, ensuring exceptional current handling and thermal stability. With its robust design and high efficiency, the S4016DH is perfect for power management, industrial control, and renewable energy systems. Experience peace of mind knowing you’re backed by a trusted name dedicated to quality and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material contributes to the lightweight nature of the product while ensuring durability and resistance to environmental factors.

Maximum DC Gate Trigger Current: 50 mA

This low trigger current enhances the product’s compatibility with a wider range of gate drive circuits and reduces power consumption.

Configuration: SINGLE

A single configuration simplifies integration into circuits and makes this SCR ideal for various applications including switching and control.

Non Repetitive Peak On-state Current: 415 A

With a high peak on-state current capability, this SCR can handle significant current surges, making it suitable for demanding applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient space utilization on PCBs, facilitating easier design and assembly.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a robust connection mechanism, ensuring reliable performance even in high-vibration environments.

Maximum On-state Current: 25 A

This specification allows the SCR to perform effectively in applications requiring consistent on-state performance within this current range.

Maximum Leakage Current: 0.01 mA

The low leakage current indicates minimal energy losses, enhancing overall efficiency and reliability in power control applications.

Repetitive Peak Reverse Voltage: 400 V

This high reverse voltage capability ensures that the SCR can withstand significant voltage spikes, making it reliable for harsh operating conditions.

No. of Terminals: 3

The 3-terminal design allows for straightforward connections and easier integration into various circuit architectures.

Package Style (Meter): FLANGE MOUNT

Flange mount packaging provides enhanced heat dissipation and secure mounting options, ideal for high-power applications.

Maximum Operating Temperature: 125 °C

Operating at high temperatures ensures the SCR can function effectively in demanding thermal environments, enhancing versatility.

Trigger Device Type: SCR

As an SCR, this device is excellent for controlling large amounts of power, making it suitable for various industrial and commercial applications.

Minimum Operating Temperature: -45 °C

The wide operating temperature range allows this SCR to perform efficiently in extreme conditions, increasing application flexibility.

Terminal Finish: MATTE TIN

The matte tin finish provides excellent solderability and corrosion resistance, ensuring reliable connections over time.

Terminal Position: SINGLE

A single terminal position offers straightforward connections, simplifying installation and maintenance while optimizing layout design.

Maximum RMS On-state Current: 40 A

This high RMS on-state current capacity allows for reliable operation in various high-load applications, enhancing the product's usefulness.

Maximum DC Gate Trigger Voltage: 1.5 V

Low gate trigger voltage increases compatibility with various control circuits and reduces power loss, promoting efficiency.

Repetitive Peak Off-state Voltage: 400 V

Withstanding peaks of up to 400 V ensures reliable performance in high-voltage applications, making the SCR versatile for different uses.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/us

A high rate of rise in off-state voltage indicates a quick recovery capability, making it suitable for high-frequency applications.

Maximum Holding Current: 100 mA

This low holding current means the SCR can be turned off efficiently, allowing for effective control in switching applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) S4016DH attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

100 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

.01 mA

Non Repetitive Peak On-state Current:

415 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

25 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-45 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

40 A

Repetitive Peak Off-state Voltage:

400 V

Repetitive Peak Reverse Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

S4016DH Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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