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S4014NH

STMicroelectronics

S4014NH by STMicroelectronics

S4014NH by STMicroelectronics is a single SCR in a rectangular plastic/epoxy package, ideal for high-power applications. It supports a max on-state current of 40 A and can handle peak reverse voltages up to 800 V. Operating b/w -40 °C to 125°C, it’s perfect for robust electronic designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,755 parts In-Stock

1+ parts

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3,755

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Anansix

USA . 1,522 parts In-Stock

1+ parts

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1k+ parts

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1,522

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Vyrian

USA . 1,447 parts In-Stock

1+ parts

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1,447

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,253 parts In-Stock

1+ parts

$2.395

100+ parts

-

1k+ parts

$2.155

10k+ parts

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1,253

$2.395

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$2.155

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MKK Technologies

India . 1,621 parts In-Stock

1+ parts

$4.503

100+ parts

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1,621

$4.503

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DigiPath Technology Company

USA . 1,621 parts In-Stock

1+ parts

$4.503

100+ parts

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10k+ parts

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1,621

$4.503

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Corphita

USA . 4,513 parts In-Stock

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4,513

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Parana Technologies

USA . 692 parts In-Stock

1+ parts

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100+ parts

$2.863

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692

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$2.863

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Overview

Unlock unparalleled performance with the S4014NH from STMicroelectronics, a trusted leader in innovative semiconductor solutions. Designed for reliability and efficiency, this Silicon Controlled Rectifier excels in demanding applications like motor control, power conversion, and lighting systems. With its robust design, it delivers exceptional peak current handling and operates seamlessly in extreme conditions. Elevate your projects with STMicroelectronics’ commitment to quality and advanced technology!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental factors, making it suitable for various applications.

Maximum DC Gate Trigger Current: 75 mA

A relatively high gate trigger current allows for effective control of the SCR, ensuring reliable operation in diverse circuits.

Configuration: SINGLE

Single configuration simplifies integration into circuits, making this SCR a straightforward choice for many designs.

Non Repetitive Peak On-state Current: 415 A

High non-repetitive peak on-state current capacity enables handling of large current spikes, enhancing performance in demanding applications.

Package Shape: RECTANGULAR

The rectangular package shape provides ease of mounting and aligns well with various PCB designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer strong mechanical support and heat dissipation, making it ideal for high-power applications.

Maximum On-state Current: 40 A

This maximum rating of 40 A allows the SCR to be used in medium to high-power applications effectively.

Maximum Leakage Current: 3 mA

Low leakage current enhances the efficiency of the circuit, minimizing unwanted power loss.

Repetitive Peak Reverse Voltage: 800 V

The ability to withstand high reverse voltages ensures reliability in applications involving high-voltage environments.

No. of Terminals: 3

A three-terminal design facilitates easy integration and improves functionality in control circuits.

Package Style (Meter): FLANGE MOUNT

Flange mount style ensures secure installation and effective thermal management, supporting high-performance operation.

Maximum Operating Temperature: 125 °C

A high operating temperature rating allows this SCR to function in more demanding temperature environments without failure.

Trigger Device Type: SCR

Being an SCR allows for controlled rectification, making it a valuable component in power electronics applications.

Minimum Operating Temperature: -40 °C

A wide operating temperature range guarantees robustness and functionality in extreme environments.

Terminal Finish: MATTE TIN

Matte tin finish enhances solderability and contributes to improved long-term reliability of the connections.

Terminal Position: SINGLE

Single terminal position simplifies layout planning on a PCB, facilitating easier integration.

Maximum RMS On-state Current: 40 A

The ability to handle 40 A RMS makes this SCR suitable for a broad range of industrial and electrical applications.

Maximum DC Gate Trigger Voltage: 2.5 V

Low gate trigger voltage requirements enhance compatibility with a variety of control circuits.

Repetitive Peak Off-state Voltage: 800 V

Ability to withstand 800 V off-state voltage ensures the SCR operates safely in high-voltage applications.

Minimum Critical Rate of Rise of Off-state Voltage: 750 V/μs

High critical rate of rise improves the device's performance in fast-switching applications.

Maximum Holding Current: 115 mA

A higher holding current extends the control range and ensures stable operation during low current conditions.

Technical Specifications

Silicon Controlled Rectifiers (SCR) S4014NH attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

750 V/us

Maximum DC Gate Trigger Current:

75 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

115 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

3 mA

Non Repetitive Peak On-state Current:

415 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

40 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

40 A

Repetitive Peak Off-state Voltage:

800 V

Repetitive Peak Reverse Voltage:

800 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

S4014NH Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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