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S4014MH

STMicroelectronics

S4014MH by STMicroelectronics

S4014MH by STMicroelectronics is a single SCR in a rectangular plastic/epoxy package, ideal for high-power applications. It supports a max on-state current of 40 A and non-repetitive peak on-state current of 415 A, with a reverse voltage rating of 600 V. Operating b/w -45 °C to 125°C, it’s perfect for robust electronic designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 1,888 parts In-Stock

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1,888

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Vyrian

USA . 1,687 parts In-Stock

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1,687

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Digiode

USA . 279 parts In-Stock

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279

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,792 parts In-Stock

1+ parts

$2.935

100+ parts

-

1k+ parts

$2.641

10k+ parts

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1,792

$2.935

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$2.641

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MKK Technologies

India . 1,684 parts In-Stock

1+ parts

$5.519

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1,684

$5.519

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DigiPath Technology Company

USA . 1,684 parts In-Stock

1+ parts

$5.519

100+ parts

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1,684

$5.519

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Corphita

USA . 3,584 parts In-Stock

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3,584

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Parana Technologies

USA . 1,623 parts In-Stock

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$3.509

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1,623

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$3.509

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Overview

Unlock the power of precision with the S4014MH from STMicroelectronics, a leader in semiconductor innovation. This high-performance Silicon Controlled Rectifier (SCR) delivers exceptional reliability and efficiency, making it ideal for demanding applications in industrial control, power management, and automotive systems. With its robust design and impressive current handling capabilities, the S4014MH ensures optimal performance while reducing maintenance costs, empowering you with the confidence to elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy body offers excellent protection against environmental factors, ensuring longevity and reliability in various applications.

Maximum DC Gate Trigger Current: 75 mA

With a relatively low gate trigger current requirement, this SCR is energy-efficient and can be easily driven by low-power control circuits.

Configuration: SINGLE

Single configuration provides simplicity in circuit design, making it easier to integrate into various environments.

Non Repetitive Peak On-state Current: 415 A

A high on-state current capability makes this SCR suitable for demanding applications that need to handle large current surges.

Package Shape: RECTANGULAR

The rectangular shape facilitates efficient mounting and integration into existing PCB designs, optimizing space usage.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical support and enhanced connection reliability, ideal for challenging environments.

Maximum On-state Current: 40 A

The ability to handle 40 A on-state current ensures that it can be used in applications requiring significant power handling.

Maximum Leakage Current: 3 mA

A low leakage current minimizes energy losses, making the SCR an efficient choice for power-sensitive applications.

Repetitive Peak Reverse Voltage: 600 V

The high reverse voltage rating allows this SCR to operate safely in applications with high voltage fluctuations, providing increased reliability.

No. of Terminals: 3

The optimized terminal count streamlines circuit layout and simplifies connection processes in various applications.

Package Style (Meter): FLANGE MOUNT

Flange mount designs offer secure mounting options, enhancing thermal performance and stability during operation.

Maximum Operating Temperature: 125 °C

High operational temperature range suits it for use in tough environments, ensuring it functions reliably in extreme conditions.

Trigger Device Type: SCR

As a Silicon Controlled Rectifier, this product offers high efficiency in controlling large power loads, essential for many industrial applications.

Minimum Operating Temperature: -45 °C

With a wide operating temperature range, this SCR can perform effectively in extreme cold, suitable for outdoor or refrigerated systems.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides resistance to corrosion and ensures better solderability, leading to reliable connections.

Terminal Position: SINGLE

Single terminal positioning allows for easier integration into circuits, making it user-friendly for designers and engineers.

Maximum RMS On-state Current: 40 A

The RMS rating matches the on-state current rating, making it suitable for applications requiring consistent power handling.

Maximum DC Gate Trigger Voltage: 2.5 V

A low gate trigger voltage reduces power requirements for control circuitry, enhancing overall system efficiency.

Repetitive Peak Off-state Voltage: 600 V

Capable of handling repeated high off-state voltages, ensuring the SCR remains functional even in volatile voltage conditions.

Minimum Critical Rate of Rise of Off-state Voltage: 750 V/us

A high rate of rise capability makes it versatile in rapid switching applications and enhances performance in transient conditions.

Maximum Holding Current: 115 mA

The ability to handle a significant holding current ensures stable operation, preventing accidental turn-off in unstable conditions.

Technical Specifications

Silicon Controlled Rectifiers (SCR) S4014MH attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

750 V/us

Maximum DC Gate Trigger Current:

75 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

115 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

3 mA

Non Repetitive Peak On-state Current:

415 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

40 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-45 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

40 A

Repetitive Peak Off-state Voltage:

600 V

Repetitive Peak Reverse Voltage:

600 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

S4014MH Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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