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S4016BH

STMicroelectronics

S4016BH by STMicroelectronics

S4016BH by STMicroelectronics is a single SCR in a rectangular plastic/epoxy package, ideal for high-power applications. It supports a max on-state current of 25 A and non-repetitive peak on-state current of 415 A, withstanding up to 200 V. Operating b/w -45 °C to 125°C, it’s perfect for robust electronic designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,909 parts In-Stock

1+ parts

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4,909

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Digiode

USA . 2,666 parts In-Stock

1+ parts

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2,666

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Anansix

USA . 2,301 parts In-Stock

1+ parts

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2,301

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,107 parts In-Stock

1+ parts

$2.552

100+ parts

-

1k+ parts

$2.297

10k+ parts

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1,107

$2.552

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$2.297

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MKK Technologies

India . 1,743 parts In-Stock

1+ parts

$4.799

100+ parts

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1,743

$4.799

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DigiPath Technology Company

USA . 1,743 parts In-Stock

1+ parts

$4.799

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1,743

$4.799

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Parana Technologies

USA . 1,783 parts In-Stock

1+ parts

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100+ parts

$3.051

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1,783

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$3.051

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Corphita

USA . 594 parts In-Stock

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594

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Overview

Elevate your designs with the S4016BH from STMicroelectronics—a top-tier Silicon Controlled Rectifier that combines exceptional quality with unmatched reliability. Renowned for its superior performance, STMicroelectronics ensures every component meets stringent industry standards. Ideal for demanding applications, this SCR delivers robust current handling and low leakage, enhancing efficiency and longevity in your systems. Experience peace of mind and innovation with the S4016BH, your trusted solution for electrical control.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy construction enhances longevity and reliability, making it suitable for various applications.

Maximum DC Gate Trigger Current: 50 mA

A higher gate trigger current allows for better control and faster switching, providing versatility in circuit designs.

Configuration: SINGLE

The single configuration simplifies integration into circuits, making it a convenient option for designers.

Non Repetitive Peak On-state Current: 415 A

The ability to handle high peak currents makes it ideal for applications with significant transient loads.

Package Shape: RECTANGULAR

The rectangular shape aids in efficient use of space on PCBs, facilitating compact designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer robust mechanical stability and ease of soldering for reliable connections.

Maximum On-state Current: 25 A

This current capability ensures effective operation in a range of applications without overheating.

Maximum Leakage Current: 0.01 mA

Low leakage current signifies minimal energy loss, improving efficiency in power applications.

Repetitive Peak Reverse Voltage: 200 V

This rating provides protection against voltage spikes, making it suitable for high-voltage environments.

No. of Terminals: 3

The 3-terminal design provides flexibility in circuit configurations, enhancing usability in various applications.

Package Style (Meter): FLANGE MOUNT

Flange mount style offers easy mounting options, enhancing installation and reducing assembly time.

Maximum Operating Temperature: 125 °C

A higher temperature tolerance ensures reliability in demanding thermal environments.

Trigger Device Type: SCR

The SCR type allows for efficient control of power electronics, making it essential for various switching applications.

Minimum Operating Temperature: -45 °C

With a wide operating temperature range, this SCR can function reliably in extreme environments.

Terminal Finish: MATTE TIN

The matte tin finish improves solderability and provides corrosion resistance for long-term performance.

Terminal Position: SINGLE

Single terminal position simplifies connection setups, facilitating easy integration in designs.

Maximum RMS On-state Current: 40 A

Supporting higher RMS currents means it can effectively manage the load in high-power applications.

Maximum DC Gate Trigger Voltage: 1.5 V

Low trigger voltage enhances compatibility with low-voltage control circuits, making it versatile for design.

Repetitive Peak Off-state Voltage: 200 V

This voltage rating ensures reliability when faced with reverse voltages, protecting the SCR from damage.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/us

High rate of rise capability allows for quicker response to voltage changes, increasing efficiency in dynamic applications.

Maximum Holding Current: 100 mA

A higher holding current provides better stability once the SCR is triggered, minimizing the risk of undesired turn-off.

Technical Specifications

Silicon Controlled Rectifiers (SCR) S4016BH attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

100 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

.01 mA

Non Repetitive Peak On-state Current:

415 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

25 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-45 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

40 A

Repetitive Peak Off-state Voltage:

200 V

Repetitive Peak Reverse Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

S4016BH Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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