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RHFAC04K03V

STMicroelectronics

RHFAC04K03V by STMicroelectronics

RHFAC04K03V by STMicroelectronics is a military-grade CMOS logic gate with 6 functions, operating b/w -55 °C and 150 °C. It features a ceramic, metal-sealed package and supports supply voltages from 2V to 6V. Ideal for high-reliability applications in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,758 parts In-Stock

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4,758

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Vyrian

USA . 3,267 parts In-Stock

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3,267

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Anansix

USA . 2,752 parts In-Stock

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2,752

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 208 parts In-Stock

1+ parts

$21.843

100+ parts

-

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$19.658

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208

$21.843

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$19.658

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MKK Technologies

India . 2,121 parts In-Stock

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$41.074

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2,121

$41.074

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DigiPath Technology Company

USA . 2,121 parts In-Stock

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$41.074

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2,121

$41.074

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Component Stockers USA

USA . 529 parts In-Stock

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$99.990

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529

$99.990

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Corphita

USA . 2,739 parts In-Stock

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2,739

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Parana Technologies

USA . 1,144 parts In-Stock

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$26.116

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$26.116

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Overview

Elevate your designs with the RHFAC04K03V from STMicroelectronics, a trusted leader in innovative semiconductor solutions. This robust logic gate offers exceptional reliability and performance, engineered to meet military standards for extreme conditions. With a versatile range of applications and a compact ceramic-metal-sealed package, it ensures longevity and efficiency in any project. Experience unparalleled quality and gain a competitive edge in your systems today!

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The robust ceramic and metal-sealed construction ensures excellent reliability and protection against environmental factors, making it suitable for demanding applications.

Surface Mount: YES

Surface mount capability allows for easier and more efficient integration into modern PCB designs, speeding up the manufacturing process.

No. of Functions: 6

With six functions available, this logic gate provides versatile options for various digital circuit applications, enhancing design flexibility.

Screening Level: MIL-PRF-38535 Class V

This high screening level ensures the product meets rigorous military standards, making it reliable for critical applications.

Package Shape: RECTANGULAR

The rectangular package shape is space-efficient, allowing for better component layout on circuit boards whilst maintaining effective performance.

Nominal Supply Voltage / Vsup (V): 5

A nominal supply voltage of 5V is ideal for compatibility with a wide range of digital logic systems, facilitating easier integration.

No. of Terminals: 14

Having 14 terminals allows for versatile connection options and expands the usability of the device in various circuit configurations.

Package Style (Meter): FLATPACK

The flatpack style offers a low-profile design, which is advantageous for applications where height is a constraint.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature accommodates environments with elevated thermal conditions, ensuring reliability in harsh settings.

Minimum Operating Temperature: -55 °C

The ability to operate at temperatures as low as -55 °C makes this product suitable for extreme environments, such as aerospace and military applications.

Terminal Position: DUAL

Dual terminal position improves layout flexibility on the PCB and helps to reduce design complexity.

Maximum Seated Height: 2.72 mm

The compact seated height contributes to design efficiency in tight spaces while ensuring a low profile on circuit boards.

Width: 6.345 mm

The width allows for a compact integration while still providing sufficient spacing for reliable performance.

Minimum Supply Voltage (Vsup): 2 V

With a minimum supply voltage of only 2V, this device can operate in low-power applications, contributing to energy efficiency.

Length: 9.5 mm

The length complements the design requirements for many PCB layouts, providing a balance of size and performance.

Temperature Grade: MILITARY

The military temperature grade signifies high reliability and performance standards suitable for defense applications.

Total Dose (V): 300k Rad(Si)

A radiation tolerance up to 300k Rad(Si) makes this product ideal for space and other radiation-prone environments.

Technology: CMOS

Using CMOS technology ensures low power consumption and high noise immunity, making the product energy-efficient and reliable.

Terminal Form: FLAT

Flat terminal form results in lower parasitic inductance and capacitance, enhancing performance in high-speed applications.

Packing Method: TR

The TR packing method simplifies handling and placement during assembly processes, promoting efficiency in production.

Terminal Pitch: 1.27 mm

A terminal pitch of 1.27 mm offers a good compromise between density and ease of soldering, perfect for various PCBs.

Maximum Supply Voltage (Vsup): 6 V

The capability to handle a maximum supply voltage of 6V provides design flexibility for different logic level requirements.

Technical Specifications

Logic Gates RHFAC04K03V attributes and parameters. Explore more Logic Gates devices from STMicroelectronics

Specs

Family:

AC

JESD-30 Code:

R-CDFP-F14

Length:

9.5 mm

Logic IC Type:

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

14

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DFP

Package Equivalence Code:

FL14,.25

Package Shape:

Package Style (Meter):

FLATPACK

Packing Method:

TR

Schmitt Trigger:

NO

Screening Level:

MIL-PRF-38535 Class V

Maximum Seated Height:

2.72 mm

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Total Dose (V):

300k Rad(Si)

Width:

6.345 mm

Trade Compliance

RHFAC04K03V Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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