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RHFAC04D04Q

STMicroelectronics

RHFAC04D04Q by STMicroelectronics

RHFAC04D04Q by STMicroelectronics is a military-grade CMOS logic gate with 6 functions, operating b/w -55 °C to 125 °C. It features a propagation delay of 11 ns and supports supply voltages from 2V to 6V. Ideal for high-reliability applications in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,785 parts In-Stock

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4,785

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Anansix

USA . 1,336 parts In-Stock

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1,336

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Digiode

USA . 418 parts In-Stock

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418

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,280 parts In-Stock

1+ parts

$27.509

100+ parts

-

1k+ parts

$24.758

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2,280

$27.509

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$24.758

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MKK Technologies

India . 2,086 parts In-Stock

1+ parts

$51.729

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2,086

$51.729

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DigiPath Technology Company

USA . 2,086 parts In-Stock

1+ parts

$51.729

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2,086

$51.729

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Corphita

USA . 3,720 parts In-Stock

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3,720

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Parana Technologies

USA . 73 parts In-Stock

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$32.891

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73

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$32.891

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Overview

Unlock the potential of your projects with the RHFAC04D04Q from STMicroelectronics, a trusted name in logic gate technology. With its robust ceramic and glass-sealed design, this versatile component excels in demanding environments, ensuring reliability across military applications. Experience lightning-fast performance with low propagation delays and outstanding temperature resilience. Elevate your designs and enjoy unmatched quality, benefiting from STMicroelectronics’ legacy of innovation and excellence.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed body offers superior environmental resistance, making it ideal for harsh conditions often encountered in military and aerospace applications.

No. of Functions: 6

With 6 functions, this logic gate provides versatility, allowing designers to implement multiple logic operations in a single package, leading to more efficient space utilization.

Package Shape: RECTANGULAR

The rectangular shape facilitates easier integration into various circuit designs and is compatible with standard PCB layouts.

Nominal Supply Voltage / Vsup: 3 V

Operating at a nominal supply voltage of 3V ensures low power consumption, extending the battery life in portable applications.

No. of Terminals: 14

Having 14 terminals allows for complex interconnections and functionalities, making it suitable for intricate circuit designs.

Package Style (Meter): IN-LINE

The in-line package style simplifies the mounting process on PCBs, ensuring reliable connections and efficient use of space.

Propagation Delay (tpd): 11 ns

A propagation delay of only 11 ns enables high-speed operations, which is essential for modern digital circuits requiring quick response times.

Maximum Operating Temperature: 125 °C

This product can operate in high-temperature environments, making it suitable for industrial and military applications where thermal resistance is crucial.

Minimum Operating Temperature: -55 °C

With a minimum operating temperature of -55 °C, this logic gate is dependable in extreme cold conditions, ensuring reliable performance in diverse climates.

Terminal Position: DUAL

The dual terminal position provides flexibility in PCB layout design, facilitating better component placement and connection strategies.

Minimum Supply Voltage (Vsup): 2 V

The capability to operate at a minimum supply voltage of 2V allows for greater design flexibility and compatibility with a wide range of power sources.

Temperature Grade: MILITARY

Designed to military specifications, this product ensures durability and reliability under the rigorous demands of defense electronics.

Total Dose (V): 300k Rad(Si)

Able to withstand a total dose of 300k Rad(Si), this product is well-suited for space applications where radiation resistance is essential.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption and high noise immunity, making this logic gate ideal for battery-powered and sensitive applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form enhances mechanical stability and soldering reliability, making it a trustworthy choice for robust applications.

Maximum Supply Voltage (Vsup): 6 V

A maximum supply voltage of 6V allows for flexibility in power supply options, accommodating various circuit requirements.

Technical Specifications

Logic Gates RHFAC04D04Q attributes and parameters. Explore more Logic Gates devices from STMicroelectronics

Specs

Family:

AC

JESD-30 Code:

R-GDIP-T14

Logic IC Type:

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Propagation Delay (tpd):

11 ns

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Position:

DUAL

Total Dose (V):

300k Rad(Si)

Trade Compliance

RHFAC04D04Q Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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