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P0102AA1AA3

STMicroelectronics

P0102AA1AA3 by STMicroelectronics

P0102AA1AA3 by STMicroelectronics is a single SCR in a cylindrical plastic/epoxy package, ideal for controlling high voltage applications. It features a max on-state current of 0.5 A, peak reverse voltage of 100 V, and operates b/w -40 °C to 125 °C. This component is perfect for power management in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,050 parts In-Stock

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3,050

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Anansix

USA . 2,824 parts In-Stock

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2,824

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Digiode

USA . 1,767 parts In-Stock

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1,767

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 896 parts In-Stock

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896

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 676 parts In-Stock

1+ parts

$3.391

100+ parts

-

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$3.052

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676

$3.391

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$3.052

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MKK Technologies

India . 1,825 parts In-Stock

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$6.377

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1,825

$6.377

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DigiPath Technology Company

USA . 1,825 parts In-Stock

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$6.377

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1,825

$6.377

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Corphita

USA . 2,849 parts In-Stock

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2,849

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Parana Technologies

USA . 2,073 parts In-Stock

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$4.055

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2,073

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$4.055

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Overview

Elevate your designs with the P0102AA1AA3 from STMicroelectronics, a leader in innovative semiconductor solutions. This high-quality Silicon Controlled Rectifier (SCR) combines exceptional reliability and efficiency, making it ideal for a range of applications, from power management to motor control. With its robust performance under diverse conditions, this SCR enhances system stability and longevity, providing unparalleled value for your projects. Experience the advantage of trusted engineering with STMicroelectronics!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body provides durability and resistance to environmental factors, contributing to a longer lifespan of the SCR.

Maximum DC Gate Trigger Current: 0.2 mA

A low gate trigger current requirement allows for easier control and lower power consumption in triggering circuits.

Configuration: SINGLE

A single configuration simplifies circuit design, making it easier to incorporate into various applications.

Non Repetitive Peak On-state Current: 8 A

High non-repetitive peak on-state current capability provides reliability in applications with transient conditions.

Package Shape: ROUND

A round package shape enhances thermal performance and allows for efficient use of space in electronic designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer robust mechanical stability, making the SCR suitable for various mounting configurations.

Maximum On-state Current: 0.5 A

This maximum on-state current rating allows for suitable operation in low to moderate power applications.

Maximum Leakage Current: 6 mA

Low maximum leakage current enhances energy efficiency and minimizes losses in applications that require high reliability.

Repetitive Peak Reverse Voltage: 100 V

A high repetitive peak reverse voltage rating makes this SCR suitable for a variety of high-voltage applications.

No. of Terminals: 3

The presence of three terminals provides flexibility in circuit design and allows for easier integration into various systems.

Package Style (Meter): CYLINDRICAL

Cylindrical package style facilitates efficient heat dissipation, improving performance under load conditions.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature allows this SCR to function effectively in demanding environments.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier makes this device excellent for controlling high power and high voltage applications.

Minimum Operating Temperature: -40 °C

A low minimum operating temperature ensures reliable performance in cold environments and outdoor applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish improves solderability, enhancing the reliability of connections in circuit integration.

Terminal Position: BOTTOM

Bottom terminal positioning offers better structural integrity and ease of assembly in printed circuit boards.

Maximum RMS On-state Current: 0.8 A

High maximum RMS on-state current allows for greater power handling, making it suitable for various applications.

Maximum DC Gate Trigger Voltage: 0.8 V

A low maximum gate trigger voltage ensures compatibility with low-voltage control circuits, enhancing versatility.

Repetitive Peak Off-state Voltage: 100 V

A high repetitive peak off-state voltage supports safe operation in circuits exposed to high reverse voltages.

Minimum Critical Rate of Rise of Off-state Voltage: 75 V/us

A high critical rate of rise ensures stability and reliability in fast-switching applications, reducing the risk of damage.

Maximum Holding Current: 5 mA

Low maximum holding current ensures that the SCR will turn off effectively, enhancing circuit performance in low power applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) P0102AA1AA3 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

75 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

Maximum Leakage Current:

6 mA

Moisture Sensitivity Level (MSL):

1

Non Repetitive Peak On-state Current:

8 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.5 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

100 V

Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

P0102AA1AA3 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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