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P0102CA

STMicroelectronics

P0102CA by STMicroelectronics

P0102CA by STMicroelectronics is a single SCR in a cylindrical plastic/epoxy package, ideal for controlling high voltage applications. It features a max repetitive peak reverse voltage of 300 V and can handle up to 10 A non-repetitive peak on-state current. Operating b/w -45 °C to 125°C, it's perfect for robust electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,838 parts In-Stock

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4,838

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Digiode

USA . 1,029 parts In-Stock

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1,029

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Anansix

USA . 172 parts In-Stock

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172

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,002 parts In-Stock

1+ parts

$3.654

100+ parts

-

1k+ parts

$3.289

10k+ parts

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2,002

$3.654

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$3.289

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MKK Technologies

India . 1,106 parts In-Stock

1+ parts

$6.872

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1,106

$6.872

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DigiPath Technology Company

USA . 1,106 parts In-Stock

1+ parts

$6.872

100+ parts

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1,106

$6.872

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Corphita

USA . 3,038 parts In-Stock

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3,038

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Parana Technologies

USA . 1,551 parts In-Stock

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$4.369

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1,551

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$4.369

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Overview

Unlock the power of precision with the P0102CA from STMicroelectronics—a trusted leader in semiconductor innovation. This high-quality Silicon Controlled Rectifier ensures exceptional reliability for your applications, from industrial controls to lighting systems. With its robust design and superior performance under varying conditions, it provides unparalleled value, enhancing efficiency while reducing downtime. Choose STMicroelectronics for unmatched quality and performance in every circuit!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy body material offers excellent protection against environmental factors, making it suitable for various applications.

Maximum DC Gate Trigger Current: 0.2 mA

The low gate trigger current means lower power consumption, enhancing the efficiency of circuits where this SCR is used.

Configuration: SINGLE

The single configuration is ideal for applications requiring a compact and straightforward design, simplifying integration into various circuits.

Non Repetitive Peak On-state Current: 10 A

The ability to handle high peak currents allows this SCR to effectively manage power surges, making it a reliable choice in demanding applications.

Package Shape: ROUND

The round package shape facilitates easy mounting and integration into various electronic circuits, promoting design flexibility.

Terminal Form: WIRE

Wire terminals provide robust connections, ensuring mechanical stability and durability in various environments.

Maximum On-state Current: 0.5 A

The maximum on-state current of 0.5 A allows for effective control of medium-power applications, providing versatility in its use.

Maximum Leakage Current: 0.1 mA

Low leakage current contributes to energy efficiency and minimizes power loss, making this SCR ideal for low-power applications.

Repetitive Peak Reverse Voltage: 300 V

High reverse voltage capability ensures reliability and performance in circuits that experience frequent voltage spikes.

No. of Terminals: 3

Having three terminals allows for versatile connection options, enhancing the flexibility of circuit designs.

Package Style (Meter): CYLINDRICAL

The cylindrical package style accommodates various mounting options and aesthetic considerations in design.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures this SCR can function reliably even in high-heat environments, increasing its usability.

Trigger Device Type: SCR

As an SCR, this device provides efficient control of high power with the capability of fast switching, catering to a variety of applications.

Minimum Operating Temperature: -45 °C

The ability to operate at low temperatures makes this SCR suitable for harsh environmental conditions and outdoor applications.

Terminal Finish: MATTE TIN

Matte tin finish ensures good corrosion resistance and enhances solderability, promoting reliability in connections.

Terminal Position: BOTTOM

Bottom terminal positioning optimizes space in circuit layouts, allowing for more efficient designs.

Maximum RMS On-state Current: 0.8 A

Handling up to 0.8 A of RMS on-state current provides flexibility in applications requiring higher power handling.

Maximum DC Gate Trigger Voltage: 0.8 V

The low gate trigger voltage minimizes the power needed to switch the device on, enhancing efficiency.

Repetitive Peak Off-state Voltage: 300 V

The capability to withstand high off-state voltages ensures reliability and safety in high-voltage applications.

Minimum Critical Rate of Rise of Off-state Voltage: 10 V/us

This high rate of rise improves the SCR's ability to recover quickly from switching events, making it effective in controlling dynamic loads.

Maximum Holding Current: 5 mA

The low holding current allows for better control of the SCR operation in low-power applications, enhancing its versatility.

Nominal Circuit Commutated Turn-off Time: 200 us

A quick turn-off time allows for rapid cycling in applications, proving beneficial in controlling high-frequency loads.

Technical Specifications

Silicon Controlled Rectifiers (SCR) P0102CA attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Additional Features:

SENSITIVE GATE

Nominal Circuit Commutated Turn-off Time:

200 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

10 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

JESD-609 Code:

e3

Maximum Leakage Current:

.1 mA

Non Repetitive Peak On-state Current:

10 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.5 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-45 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

300 V

Repetitive Peak Reverse Voltage:

300 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

P0102CA Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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