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P0102BN5XA4

STMicroelectronics

P0102BN5XA4 by STMicroelectronics

STMicroelectronics P0102BN5XA4 SCR has 1.95V max on-state voltage, 0.2mA max DC gate trigger current, and 8A non-repetitive peak on-state current. Ideal for applications requiring a surface mount SCR with 0.5A max on-state current, 0.1mA max leakage current, and -40 to 125 °C operating temperature range.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,807 parts In-Stock

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2,807

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Digiode

USA . 2,347 parts In-Stock

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2,347

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Vyrian

USA . 2,102 parts In-Stock

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2,102

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,787 parts In-Stock

1+ parts

$2.758

100+ parts

-

1k+ parts

$2.482

10k+ parts

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1,787

$2.758

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$2.482

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MKK Technologies

India . 2,260 parts In-Stock

1+ parts

$5.187

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2,260

$5.187

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DigiPath Technology Company

USA . 2,260 parts In-Stock

1+ parts

$5.187

100+ parts

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2,260

$5.187

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Corphita

USA . 3,870 parts In-Stock

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3,870

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Parana Technologies

USA . 2,161 parts In-Stock

1+ parts

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100+ parts

$3.298

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2,161

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$3.298

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Overview

STMicroelectronics presents the P0102BN5XA4, a high-quality Silicon Controlled Rectifier designed for efficiency and reliability. With a maximum on-state voltage of 1.95V and maximum on-state current of 0.5A, this SCR is perfect for a wide range of applications. From power supplies to motor control, this product offers exceptional performance and durability. Trust in STMicroelectronics' reputation for excellence and choose the P0102BN5XA4 for all your semiconductor needs.

Feature Benefit Bullets

Maximum On-state Voltage: 1.95 V

Low on-state voltage allows for efficient conduction and reduced power loss.

Maximum DC Gate Trigger Current: 0.2 mA

Low trigger current ensures reliable and precise switching of the SCR.

Non Repetitive Peak On-state Current: 8 A

High peak on-state current capability allows for handling of surge currents and overloads.

Surface Mount: YES

Surface mount capability enables easy installation and space-saving on circuit boards.

Maximum On-state Current: 0.5 A

Sufficient on-state current rating for various low to medium power applications.

Maximum Leakage Current: 0.1 mA

Low leakage current ensures minimal power loss when the SCR is in the off-state.

Maximum Operating Temperature: 125 °C

Wide operating temperature range ensures reliable performance in various environmental conditions.

Trigger Device Type: SCR

SCR technology offers robust and reliable performance in switching applications.

Minimum Operating Temperature: -40 °C

Wide range of operating temperatures allows for use in cold environments.

Terminal Finish: Matte Tin (Sn)

Matte tin finish provides good conductivity and solderability for easy and secure connections.

Maximum DC Gate Trigger Voltage: 0.8 V

Low gate trigger voltage ensures efficient and precise control of the SCR.

Repetitive Peak Off-state Voltage: 200 V

High off-state voltage rating allows for handling of higher voltage applications.

Minimum Critical Rate of Rise of Off-state Voltage: 75 V/us

High rate of rise of off-state voltage capability ensures fast response and protection against voltage surges.

Maximum Holding Current: 5 mA

Holding current rating ensures stable operation and prevents false triggering of the SCR.

Technical Specifications

Silicon Controlled Rectifiers (SCR) P0102BN5XA4 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

75 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JESD-609 Code:

e3

Maximum Leakage Current:

.1 mA

Non Repetitive Peak On-state Current:

8 A

Maximum On-state Voltage:

1.95 V

Maximum On-state Current:

.5 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Trigger Device Type:

SCR

Trade Compliance

P0102BN5XA4 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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