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P0102BB

STMicroelectronics

P0102BB by STMicroelectronics

P0102BB by STMicroelectronics is a SCR with max DC gate trigger current of 0.2mA, non-repetitive peak on-state current of 10A, and max RMS on-state current of 0.8A. It is used in applications requiring reliable switching capabilities at temperatures ranging from -40 °C to 125°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,182 parts In-Stock

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4,182

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Anansix

USA . 1,844 parts In-Stock

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1,844

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Vyrian

USA . 1,547 parts In-Stock

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1,547

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LittleDiode

UK . 11 parts In-Stock

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11

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 168 parts In-Stock

1+ parts

$3.509

100+ parts

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$3.158

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168

$3.509

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$3.158

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MKK Technologies

India . 607 parts In-Stock

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$6.598

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607

$6.598

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DigiPath Technology Company

USA . 607 parts In-Stock

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$6.598

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607

$6.598

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Corphita

USA . 4,109 parts In-Stock

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Parana Technologies

USA . 489 parts In-Stock

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$4.195

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489

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$4.195

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Overview

Unlock the power of reliable performance with the P0102BB by STMicroelectronics, a top-of-the-line Silicon Controlled Rectifier designed to exceed expectations. Crafted with precision and expertise from a leading manufacturer, this SCR offers seamless functionality and durability in a variety of applications. Experience the value of quality engineering with the P0102BB, providing customers with unparalleled benefits and advantages that set it apart from the competition. Trust STMicroelectronics to deliver excellence with every product, making the P0102BB the perfect choice for your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, ensuring reliability and durability.

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current allows for precise control over switching, making it suitable for sensitive applications.

Configuration: SINGLE

Simplified design with single configuration makes installation and operation easier.

Non Repetitive Peak On-state Current: 10 A

High peak on-state current capability allows for handling of heavy loads and surge currents.

Package Shape: ROUND

Round package shape enables easy mounting and handling in various applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and reliable connections in circuit boards.

Maximum On-state Current: 0.5 A

Able to handle moderate current flow with low resistance for efficient operation.

Maximum Leakage Current: 0.1 mA

Low leakage current ensures minimal power loss and helps in energy efficiency.

Repetitive Peak Reverse Voltage: 200 V

High reverse voltage capability makes it suitable for applications requiring reverse polarity protection.

No. of Terminals: 3

Simple 3-terminal design offers easy connectivity and integration in circuits.

Package Style (Meter): CYLINDRICAL

Cylindrical package style allows for compact and space-saving installation.

Maximum Operating Temperature: 125 °C

High operating temperature range ensures reliable performance in various environmental conditions.

Trigger Device Type: SCR

SCR technology provides fast and efficient switching for control applications.

Minimum Operating Temperature: -40 °C

Wide temperature range allows for operation in extreme cold conditions.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead terminal finish ensures good solderability and secure connections.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and assembly process.

Maximum RMS On-state Current: 0.8 A

High RMS current rating allows for continuous operation under load without overheating.

Maximum DC Gate Trigger Voltage: 0.8 V

Low gate trigger voltage enables efficient control and switching in low voltage circuits.

Repetitive Peak Off-state Voltage: 200 V

High off-state voltage rating provides protection against voltage spikes and surges.

Minimum Critical Rate of Rise of Off-state Voltage: 10 V/us

Fast rate of rise ensures quick response to voltage changes, making it suitable for high-speed applications.

Maximum Holding Current: 5 mA

Holding current ensures device remains in on-state once triggered, maintaining circuit stability.

Nominal Circuit Commutated Turn-off Time: 200 us

Fast turn-off time allows for efficient switching and control in dynamic applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) P0102BB attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Nominal Circuit Commutated Turn-off Time:

200 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

10 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

Maximum Leakage Current:

.1 mA

Non Repetitive Peak On-state Current:

10 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.5 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

200 V

Repetitive Peak Reverse Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

P0102BB Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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