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P0102BA1AA3

STMicroelectronics

P0102BA1AA3 by STMicroelectronics

P0102BA1AA3 by STMicroelectronics is a SCR with max DC Gate Trigger Current of 0.2mA, Non Repetitive Peak On-state Current of 8A, and Max RMS On-state Current of 0.8A. It is used in applications requiring high current switching capabilities in a compact cylindrical package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,328 parts In-Stock

1+ parts

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8,328

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Digiode

USA . 2,666 parts In-Stock

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2,666

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Anansix

USA . 1,915 parts In-Stock

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1,915

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 470 parts In-Stock

1+ parts

$3.202

100+ parts

-

1k+ parts

$2.881

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470

$3.202

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$2.881

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Andel Nordic

Denmark . 216 parts In-Stock

1+ parts

$4.507

100+ parts

-

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$4.326

10k+ parts

$4.326

216

$4.507

-

$4.326

$4.326

MKK Technologies

India . 656 parts In-Stock

1+ parts

$6.020

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-

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656

$6.020

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DigiPath Technology Company

USA . 656 parts In-Stock

1+ parts

$6.020

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656

$6.020

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AZTECH Wire

Italy . 357 parts In-Stock

1+ parts

$18.090

100+ parts

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357

$18.090

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Component Stockers USA

USA . 319 parts In-Stock

1+ parts

$99.990

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319

$99.990

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Corphita

USA . 3,661 parts In-Stock

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3,661

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Kepictronics

USA . 2,300 parts In-Stock

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2,300

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Parana Technologies

USA . 107 parts In-Stock

1+ parts

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$3.828

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107

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$3.828

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Overview

Unlock the power of precision with the P0102BA1AA3 by STMicroelectronics. As a leader in semiconductor technology, STMicroelectronics delivers top-quality Silicon Controlled Rectifiers (SCR) that offer reliability and efficiency in a variety of applications. From industrial equipment to consumer electronics, this SCR provides superior performance with a maximum on-state current of 0.5 A and a non-repetitive peak on-state current of 8 A. Trust STMicroelectronics to bring innovation and value to your projects with the P0102BA1AA3.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides good protection for the internal components of the SCR, ensuring longevity and durability.

Maximum DC Gate Trigger Current: 0.2 mA

The low gate trigger current allows for efficient and precise control of the SCR, making it suitable for various applications.

Configuration: SINGLE

The single configuration simplifies the installation and usage of the SCR, making it user-friendly.

Repetitive Peak On-state Current: 8 A

The high repetitive peak on-state current capacity makes the SCR suitable for handling heavy loads and high power applications.

Maximum On-state Current: 0.5 A

The low on-state current ensures efficient power management and prevents overheating of the SCR.

Repetitive Peak Reverse Voltage: 200 V

The high repetitive peak reverse voltage allows the SCR to withstand reverse voltage spikes, enhancing its reliability.

Maximum Operating Temperature: 125 °C

The high operating temperature range enables the SCR to perform reliably in a wide range of environments and applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures the SCR can function even in extremely cold conditions, making it versatile.

Maximum RMS On-state Current: 0.8 A

The high RMS on-state current capacity allows the SCR to handle continuous current flow without overheating or failure.

Repetitive Peak Off-state Voltage: 200 V

The high repetitive peak off-state voltage capability ensures the SCR can withstand voltage fluctuations and protects the circuit.

Technical Specifications

Silicon Controlled Rectifiers (SCR) P0102BA1AA3 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

75 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

Maximum Leakage Current:

6 mA

Non Repetitive Peak On-state Current:

8 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.5 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

200 V

Repetitive Peak Reverse Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

P0102BA1AA3 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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