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M74HCT04B1R

STMicroelectronics

M74HCT04B1R by STMicroelectronics

M74HCT04B1R by STMicroelectronics is a CMOS Logic Gates IC with 6 functions, 27ns propagation delay at 5V. It has a max operating temperature of 125 °C and is suitable for military-grade applications requiring fast signal processing in a compact IN-LINE package.

Median Price

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Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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Vyrian

USA . 6,823 parts In-Stock

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Anansix

USA . 2,303 parts In-Stock

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R&J Components

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Digiode

USA . 1,707 parts In-Stock

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LWI Electronics Inc

India . 15 parts In-Stock

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Zilex Electronics Inc.

Canada . 12 parts In-Stock

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Semi Source

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PC Components Company LLC

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Bristol Electronics

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Microchip USA

USA . 449 parts In-Stock

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$4.305

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IDEA Electronic Components Group

UK . 233 parts In-Stock

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$7.638

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$6.874

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AZTECH Wire

Italy . 562 parts In-Stock

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$10.850

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MKK Technologies

India . 148 parts In-Stock

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DigiPath Technology Company

USA . 148 parts In-Stock

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

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Perfect Parts

USA . 7,710 parts In-Stock

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Authorized Procurement Solutions

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S.R.D Solutions

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Corphita

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Parana Technologies

USA . 1,191 parts In-Stock

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Overview

Unlock the power of reliable and efficient logic gates with the M74HCT04B1R by STMicroelectronics. As a trusted manufacturer in the industry, STMicroelectronics ensures top-notch quality and performance. Ideal for a wide range of applications, this product offers customers unparalleled value and benefits. Experience fast propagation delays, high load capacitance, and a wide temperature range, making it perfect for demanding environments. Trust STMicroelectronics to deliver cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the internal components of the logic gates, ensuring a longer lifespan and reliability of the product.

Propagation Delay At Nominal Supply: 27 ns

Fast propagation delay of 27 ns ensures quick response times for logic operations, making this product suitable for high-speed applications.

No. of Functions: 6

With 6 functions in one package, this product offers versatility and flexibility in designing complex logic circuits, reducing the need for additional components.

Nominal Supply Voltage: 5V

Operates at a standard 5V supply voltage, making it compatible with a wide range of electronic systems and easy to integrate into existing designs.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures up to 125 °C, ensuring reliable performance in harsh environmental conditions or industrial applications.

Technology: CMOS

Utilizes CMOS technology, which offers low power consumption, high noise immunity, and compatibility with a wide range of voltages, making it an efficient and versatile choice for logic gates.

Technical Specifications

Logic Gates M74HCT04B1R attributes and parameters. Explore more Logic Gates devices from STMicroelectronics

Specs

Family:

HCT

JESD-30 Code:

R-PDIP-T14

JESD-609 Code:

e3

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

4 Amp

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP14,.3

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

TUBE

Power Supplies (V):

5

Propagation Delay At Nominal Supply:

27 ns

Propagation Delay (tpd):

27 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

5.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

M74HCT04B1R Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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